MBR10100CT-E3/45

Diode Arrays Overview

The MBR10100CT-E3/45 is a dual common-cathode high-voltage Schottky rectifier manufactured by Vishay General Semiconductor. It utilizes Trench MOS Schottky technology to achieve lower power losses and high efficiency. The device features a maximum repetitive peak reverse voltage of 100 V and an average forward rectified current of 10 A per diode at a case temperature of 105 °C. It operates within a junction temperature range of -65 °C to +150 °C and includes a guardring for overvoltage protection.

Diode Arrays Feature Summary

• Trench MOS Schottky technology for reduced power loss
• Guardring structure providing overvoltage protection
• High forward surge capability with low thermal resistance

Diode Arrays Applications

• High frequency rectification in switching mode power supplies
• Freewheeling diodes in DC-to-DC converters
• Polarity protection circuits

Diode Arrays Procurement Notes

Verify the component against datasheet document number 88666 revision 07-May-08. Confirm the E3 suffix indicates consumer grade compliance with JESD 201 class 1A whisker testing. Ensure the /45 package code corresponds to the specified tube delivery mode. Validate RoHS 2011/65/EU compliance status prior to integration.

Diode Arrays Selection Notes

Select this component for applications requiring high-frequency operation and low forward voltage drop. The TO-220AB package supports mounting torques up to 10 in-lbs. Consider the 10 A total device rating when designing thermal management systems, as derating curves are provided for case temperatures exceeding 105 °C.

Diode Arrays Part Context

This part belongs to the MBR1090CT and MBR10100CT series of dual common-cathode high-voltage Schottky rectifiers. The series is characterized by its silicon construction and suitability for general-purpose high-efficiency rectification tasks where fast switching speeds are required.

Diode Arrays Replacement Considerations

MBR1090CT-E3/45

Diode Arrays FAQ

What is the maximum non-repetitive peak forward surge current?

The maximum non-repetitive peak forward surge current is 120 A per diode for an 8.3 ms single half sine-wave superimposed on rated load.

How does the E3 suffix affect the component specifications?

The E3 suffix denotes that the component is consumer grade and meets the JESD 201 class 1A tin whisker test requirements.

What is the typical thermal resistance per diode?

The typical thermal resistance (RθJC) per diode is 4.4 °C/W at a case temperature of 25 °C.