MBR1045CTH

Diode Arrays Overview

The MBR1045CTH is a Schottky barrier rectifier manufactured by Taiwan Semiconductor Corporation. It features a dual common cathode configuration housed in a TO-220 package with three pins for through-hole mounting. The device supports a maximum repetitive peak reverse voltage of 45 V and an average forward rectified current of 25 A. Key electrical characteristics include a maximum non-repetitive peak forward surge current of 200 A, a peak reverse current of 1 μA, and a maximum forward voltage of 1.02 V. It operates within a temperature range of -65°C to 150°C.

Diode Arrays Feature Summary

• Dual common cathode configuration for efficient circuit design
• Metal silicon junction construction with majority carrier conduction
• Guard ring design provides protection against overvoltage transients
• Lead-free pure tin-plated terminals ensure solderability

Diode Arrays Applications

• Low voltage high frequency inverters
• Free wheeling diode applications
• Polarity protection circuits

Diode Arrays Procurement Notes

Verify the specific suffix 'TH' against official manufacturer documentation to confirm tape-and-reel packaging or specific marking variations. Confirm RoHS compliance status and lead-free terminal specifications directly from the datasheet. Ensure the selected component matches the required thermal management capabilities for the intended operating environment.

Diode Arrays Selection Notes

Select this component for applications requiring low forward voltage drop and high efficiency at moderate voltages. The dual common cathode arrangement simplifies bridge rectifier designs. Verify that the 25 A current rating and 45 V blocking voltage align with system requirements. Consider thermal dissipation needs given the TO-220 package constraints.

Diode Arrays Part Context

This part belongs to the MBR series of Schottky barrier rectifiers from Taiwan Semiconductor. These devices are designed for general-purpose rectification where speed and efficiency are critical. The series utilizes metal silicon junction technology to minimize power loss and improve overall system performance compared to standard PN junction diodes.

Diode Arrays Replacement Considerations

Cross-reference with other dual common cathode Schottky rectifiers in the TO-220 package. Verify matching electrical parameters such as 45 V reverse voltage and 25 A forward current. Ensure pinout compatibility and thermal resistance values are comparable for direct substitution.