MBR12045CTR

$48.80

Description：DIODE MOD SCHOTT 45V 120A 2TOWER
Series：-

SKU:44bc6db2cdaf Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

MBR12045CTR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 45V 120A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR12045CTR

Description：DIODE MOD SCHOTT 45V 120A 2TOWER
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Anode
Technology：Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max)：45 V
Current - Average Rectified (Io) (per Diode)：120A (DC)
Voltage - Forward (Vf) (Max) @ If：650 mV @ 60 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：3 mA @ 20 V
Operating Temperature - Junction：-55°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Twin Tower
Supplier Device Package：Twin Tower
Grade：-
Qualification：-

Diode Arrays datasheet and documents for MBR12045CTR

MBR12045CTR

Diode Arrays Overview

The MBR12045CTR is a silicon power Schottky diode module manufactured by GeneSiC Semiconductor. It features a Twin Tower package with screw mount installation and an average forward current rating of 120 A per package. The device supports a repetitive peak reverse voltage of 45 V, with a maximum forward voltage of 0.7 V per leg at Tj = 100 °C. It operates within a junction temperature range of -55 °C to 150 °C and includes high surge capability.

Diode Arrays Feature Summary

High surge capability for robust performance under transient conditions
Twin Tower package design for efficient thermal management
Not ESD sensitive for simplified handling

Diode Arrays Applications

Power supply rectification
DC-DC converter freewheeling
Inverter circuits

Diode Arrays Procurement Notes

Verify the specific part number against official GeneSiC Semiconductor documentation to confirm electrical ratings and pinout configuration. Ensure compatibility with existing cooling infrastructure due to the Twin Tower package requirements. Confirm RoHS compliance status through the manufacturer's latest product data sheet before finalizing procurement specifications.

Diode Arrays Selection Notes

Select this component for applications requiring high current handling and low forward voltage drop in power conversion systems. Consider the 120 A average forward current rating and 45 V reverse voltage limits when designing circuit parameters. Evaluate thermal resistance characteristics to ensure adequate heat dissipation within the specified operating temperature range.

Diode Arrays Part Context

This component belongs to the MBR120 series of silicon power Schottky diodes from GeneSiC Semiconductor. The series offers various voltage ratings from 45 V to 100 V while maintaining consistent current capabilities. The Twin Tower package provides a standardized form factor for industrial power electronics applications.