Diode Arrays MBR20030CT product image

MBR20030CT

$63.89
  • Description:DIODE MOD SCHOTT 30V 200A 2TOWER
  • Series:-

SKU:9d0bc3634cec Category: Brand:

  
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MBR20030CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 30V 200A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR20030CT

  • Description:DIODE MOD SCHOTT 30V 200A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):30 V
  • Current - Average Rectified (Io) (per Diode):200A (DC)
  • Voltage - Forward (Vf) (Max) @ If:650 mV @ 100 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:5 mA @ 20 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR20030CT

MBR20030CT

Diode Arrays Overview

The GeneSiC Semiconductor MBR20030CT is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 30 V and an average forward current of 200 A per package. It features a Twin Tower screw-mount package with a maximum forward voltage of 0.70 V at Tj = 25 °C. The junction-to-case thermal resistance is 0.45 °C/W per leg, supporting operation within a temperature range of -55 °C to +150 °C.

Diode Arrays Feature Summary

  • High surge capability with a peak forward surge current of 1500 A per leg
  • ESD sensitive design considerations included in the component architecture
  • Twin Tower package configuration optimized for screw mounting applications

Diode Arrays Applications

  • High current DC-DC conversion circuits
  • Freewheeling rectification in low-voltage power supplies
  • Industrial motor drive output stages

Diode Arrays Procurement Notes

Verify the specific datasheet revision and terminal configuration before procurement. Confirm that the Twin Tower package dimensions match the intended heatsink interface. Ensure the supplier provides traceability documentation consistent with the manufacturer's quality standards for high-current modules.

Diode Arrays Selection Notes

Select this component when a 30 V blocking voltage and 200 A continuous current are required in a dual-leg configuration. The low forward voltage drop minimizes conduction losses compared to standard recovery diodes. Evaluate the thermal resistance requirements against the system's cooling capacity to maintain junction temperatures within the specified limits.

Diode Arrays Part Context

This module belongs to the MBR200 series of silicon power Schottky diodes from GeneSiC Semiconductor. The series offers variants ranging from 20 V to 40 V reverse voltage while maintaining a consistent 200 A current rating. The Twin Tower package allows for efficient thermal management in compact power electronics designs.

Diode Arrays Replacement Considerations

Direct replacements include other MBR200 series variants such as MBR20020CT or MBR20035CT if voltage ratings differ. Verify pinout compatibility and thermal resistance values when substituting with modules from different manufacturers.

MBR20030CTMBR20030CT
$63.89
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