Diode Arrays MBR2035PTHC0G product image

MBR2035PTHC0G

  • Description:DIODE ARR SCHOTT 35V 20A TO247AD
  • Series:-

SKU:b1c19100c432 Category: Brand:

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MBR2035PTHC0G is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is DIODE ARR SCHOTT 35V 20A TO247AD. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR2035PTHC0G

  • Description:DIODE ARR SCHOTT 35V 20A TO247AD
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):35 V
  • Current - Average Rectified (Io) (per Diode):20A
  • Voltage - Forward (Vf) (Max) @ If:840 mV @ 20 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:100 µA @ 35 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AD (TO-3P)
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for MBR2035PTHC0G

MBR2035PTHC0G

Diode Arrays Overview

The MBR2035PTHC0G is a Schottky barrier rectifier from the Taiwan Semiconductor MBR2035PT series, housed in a TO-247AD (TO-3P) package. It features dual diodes in a common cathode configuration with a maximum repetitive peak reverse voltage of 35 V and an average forward current rating of 20 A. The device supports a surge peak forward current of 150 A and operates within a junction temperature range of -55 °C to +150 °C. Electrical characteristics include a typical forward voltage of 0.84 V at 20 A and 25 °C, with a maximum reverse current of 100 µA at rated voltage.

Diode Arrays Feature Summary

  • Guard ring structure provides enhanced protection against overvoltage transients.
  • AEC-Q101 qualified for automotive reliability standards.
  • Low power loss and high efficiency operation due to low forward voltage drop.
  • Halogen-free construction compliant with IEC 61249-2-21.

Diode Arrays Applications

  • Switching mode power supplies (SMPS)
  • DC to DC converters
  • Adapters
  • Monitor power circuits

Diode Arrays Procurement Notes

Verify the specific suffix 'HC0G' against official Taiwan Semiconductor documentation to confirm exact packing and qualification details. Ensure the component meets RoHS compliance and halogen-free requirements as specified in the datasheet. Confirm that the TO-247AD mounting torque does not exceed 1.13 N⋅m during assembly to prevent mechanical damage.

Diode Arrays Selection Notes

Select this component for applications requiring high surge capability and low forward voltage drop in a TO-247AD package. The 35 V rating suits low-voltage, high-frequency inverters and polarity protection circuits. Verify thermal management requirements, noting the junction-to-case thermal resistance of 1 °C/W, to ensure operation remains within the specified temperature limits under load.

Diode Arrays Part Context

This part belongs to the MBR2035PT – MBR20200PT series by Taiwan Semiconductor, covering voltage ratings from 35 V to 200 V. All variants share the same 20 A current rating and TO-247AD package form factor. The series is designed for general-purpose rectification with high efficiency and robust transient protection capabilities suitable for industrial and consumer electronics.

Diode Arrays Replacement Considerations

Cross-reference with other MBR20xPT series parts for different voltage ratings if system requirements change. Verify pinout compatibility and thermal performance when substituting with similar Schottky rectifiers from other manufacturers.

Diode Arrays FAQ

What is the maximum junction temperature for the MBR2035PTHC0G?

The maximum operating junction temperature is +150 °C.

Does the MBR2035PTHC0G meet automotive standards?

Yes, the 'H' suffix indicates that the device is AEC-Q101 qualified.

What is the typical forward voltage at full load?

The typical forward voltage is 0.84 V when measured at an average forward current of 20 A and a junction temperature of 25 °C.

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