MBR20H150CT

Diode Arrays Overview

The MBR20H150CT is a dual common-cathode Schottky barrier rectifier manufactured by Taiwan Semiconductor Corporation. It features two silicon elements within a single TO-220AB plastic package, providing a total continuous forward current of 20 amperes. The device is rated for a maximum repetitive peak reverse voltage of 150 volts. Designed for high-efficiency applications, it utilizes majority carrier conduction to minimize power loss and forward voltage drop. The component supports an operating junction temperature range up to 175°C and includes guardring stress protection.

Diode Arrays Feature Summary

• Schottky barrier construction utilizing majority carrier conduction for low forward voltage and reduced switching losses
• Dual common-cathode configuration integrating two independent rectifying elements in a single package
• Guardring technology incorporated for enhanced junction stress protection and reliability
• Plastic encapsulation material classified under UL94 V-0 flammability rating

Diode Arrays Applications

• High-frequency DC-to-DC converter output rectification
• Free-wheeling diodes in inductive load circuits
• Power supply input rectification stages requiring low reverse leakage
• Battery charging circuits with high efficiency requirements

Diode Arrays Procurement Notes

Verify the manufacturer marking matches Taiwan Semiconductor Corporation specifications. Confirm the package type is TO-220AB with three pins. Ensure the part number suffix indicates the correct variant if applicable. Check datasheet revisions for any updates to thermal or electrical characteristics before final integration.

Diode Arrays Selection Notes

Select this component when a dual common-cathode topology is required for synchronous rectification or free-wheeling applications. The 150V rating suits low-voltage DC bus systems. Consider the TO-220AB package for through-hole mounting and heatsinking capabilities. Evaluate thermal resistance requirements based on the expected forward current and ambient temperature conditions.

Diode Arrays Part Context

This device belongs to the MBR20H series of ultra-low leakage Schottky rectifiers from Taiwan Semiconductor. The series offers various voltage ratings including 100V, 150V, and 200V options. These components are designed to replace standard p-n junction rectifiers in applications where speed and efficiency are critical. The TO-220AB form factor allows for direct replacement in many legacy designs using similar packages.

Diode Arrays Replacement Considerations

• MBR20H100CT
• MBR20H200CT

Diode Arrays FAQ

What is the maximum operating junction temperature for the MBR20H150CT?

The maximum operating junction temperature is 175°C.

How is the internal structure configured in this package?

It contains two separate silicon Schottky barrier diodes connected in a common-cathode configuration.

Does the device include protection against electrical stress?

Yes, the device incorporates a guardring structure for junction stress protection.