MBR20H50CTHE3/45

Diode Arrays Overview

The MBR20H50CTHE3/45 is a dual common-cathode Schottky rectifier manufactured by Vishay General Semiconductor. It utilizes high barrier technology for improved high-temperature performance and features a guardring for overvoltage protection. The device operates with a maximum repetitive peak reverse voltage of 50 V and supports a total average forward rectified current of 20 A (10 A per diode). Key electrical characteristics include a maximum instantaneous forward voltage of 0.68 V at 10 A and 25 °C, and a maximum reverse current of 100 µA at rated voltage and 125 °C. It offers a peak forward surge current capability of 150 A and an operating junction temperature range from -65 °C to +175 °C.

Diode Arrays Feature Summary

• High barrier technology designed for enhanced high-temperature operation
• Guardring structure provides protection against overvoltage stress
• Low forward voltage drop contributes to reduced power losses and higher efficiency
• Low leakage current ensures stable performance across the specified temperature range

Diode Arrays Applications

• Low voltage, high frequency rectification in switching mode power supplies
• Freewheeling diodes in DC-to-DC converter circuits
• Polarity protection applications

Diode Arrays Procurement Notes

Verify the specific suffix HE3 indicates high reliability grade compliance with JESD 201 class 2 whisker test requirements. Confirm package type matches TO-220AB specifications. Check RoHS compliance status against Directive 2011/65/EU. Ensure ordering information aligns with the manufacturer's preferred part number format. Validate thermal resistance parameters for your specific mounting configuration.

Diode Arrays Selection Notes

Select this component when designing circuits requiring dual common-cathode configurations with high surge current handling capabilities. Consider the 175 °C maximum junction temperature for high-thermal environments. Evaluate the 0.68 V forward voltage drop at full load for efficiency calculations. Ensure the 50 V reverse voltage rating exceeds the circuit's peak working voltage. Verify that the TO-220AB package fits the available board space and heatsinking constraints.

Diode Arrays Part Context

This device belongs to the MBR(F,B)20HxxCT series, which includes variants with different reverse voltage ratings ranging from 35 V to 60 V. All members share identical physical dimensions and thermal characteristics but differ in their maximum repetitive peak reverse voltage specifications. The series is engineered for general-purpose rectification in power electronics applications requiring robust performance under varying thermal conditions.

Diode Arrays Replacement Considerations

MBR20H50CT-E3/45

Diode Arrays FAQ

What does the HE3 suffix indicate for this component?

The HE3 suffix denotes the high reliability grade, which meets the JESD 201 class 2 whisker test requirement.

How is the forward current distributed between the two diodes?

The device has a total maximum average forward rectified current of 20 A, with each individual diode rated for 10 A.

What is the maximum non-repetitive peak forward surge current?

Each diode can withstand a peak forward surge current of 150 A for an 8.3 ms single half sine-wave superimposed on rated load.