Diode Arrays MBR25150CTHC0G product image

MBR25150CTHC0G

  • Description:DIODE ARR SCHOT 150V 25A TO220AB
  • Series:-

SKU:8b4105e68bd0 Category: Brand:

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MBR25150CTHC0G is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is DIODE ARR SCHOT 150V 25A TO220AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR25150CTHC0G

  • Description:DIODE ARR SCHOT 150V 25A TO220AB
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):150 V
  • Current - Average Rectified (Io) (per Diode):25A
  • Voltage - Forward (Vf) (Max) @ If:1.02 V @ 25 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:100 µA @ 150 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220AB
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for MBR25150CTHC0G

MBR25150CTHC0G

Diode Arrays Overview

The MBR25150CTHC0G is a dual common cathode Schottky barrier rectifier manufactured by Taiwan Semiconductor. It features a 150V repetitive peak reverse voltage and a continuous forward current of 12.5A per element. The device utilizes a metal-silicon junction for majority carrier conduction, ensuring low power loss and high efficiency. It is housed in a TO-220AB package with isolated cathode connection. The maximum non-repetitive peak forward surge current is rated at 200A, and the operating temperature range extends from -65°C to 175°C.

Diode Arrays Feature Summary

  • Metal silicon junction construction enabling majority carrier conduction
  • Guardring design provides protection against overvoltage transients
  • High temperature soldering capability guaranteed for surface mount processes

Diode Arrays Applications

  • Low voltage high frequency inverters
  • Free wheeling applications
  • Polarity protection circuits

Diode Arrays Procurement Notes

Verify the specific suffix HC0G against official Taiwan Semiconductor documentation to confirm lead-free plating and RoHS compliance status. Ensure the ordering part number matches the exact electrical ratings and package type required for the target application circuit design.

Diode Arrays Selection Notes

Select this component for designs requiring high efficiency in low voltage environments due to its low forward voltage drop characteristics. The dual common cathode configuration allows for use in full-wave rectification or synchronous rectification topologies without requiring external diodes.

Diode Arrays Part Context

This device belongs to the MBR series of surface mount Schottky barrier rectifiers from Taiwan Semiconductor. It shares functional similarities with other parts in the family but is distinguished by its specific voltage rating and dual-element configuration within the TO-220AB housing.

Diode Arrays Replacement Considerations

Cross-reference with MBR25150CT for equivalent performance specifications. Verify pinout compatibility and thermal resistance parameters before substituting in existing PCB layouts.

MBR25150CTHC0GMBR25150CTHC0G

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