Diode Arrays MBR2545CTHE3/45 product image

MBR2545CTHE3/45

  • Description:DIODE ARR SCHOTT 45V 15A TO2203
  • Series:-

SKU:2add6c06cd88 Category: Brand:

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MBR2545CTHE3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 45V 15A TO2203. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR2545CTHE3/45

  • Description:DIODE ARR SCHOTT 45V 15A TO2203
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):45 V
  • Current - Average Rectified (Io) (per Diode):15A
  • Voltage - Forward (Vf) (Max) @ If:820 mV @ 30 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:200 µA @ 45 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for MBR2545CTHE3/45

MBR2545CTHE3/45

Diode Arrays Overview

The MBR2545CTHE3/45 is a dual common cathode Schottky rectifier manufactured by Vishay General Semiconductor. It features a maximum repetitive peak reverse voltage of 45 V and a total maximum average forward rectified current of 25 A, with 12.5 A per diode. The device exhibits a maximum instantaneous forward voltage of 0.82 V at 30 A and 25 °C case temperature. It supports a peak forward surge current of 150 A per diode and operates within a junction temperature range of -65 °C to +150 °C. The component utilizes a TO-220AB package.

Diode Arrays Feature Summary

  • Guardring structure provides overvoltage protection
  • Low forward voltage drop for high efficiency
  • High frequency operation capability
  • Matte tin plated leads are solderable per J-STD-002

Diode Arrays Applications

  • Switching mode power supplies
  • Freewheeling diodes
  • DC/DC converters
  • Polarity protection applications

Diode Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm compliance status and packaging details. Confirm that the procurement channel sources directly from authorized distributors or the manufacturer to ensure authenticity. Check for any recent product change notices regarding material categorization or manufacturing location updates before finalizing orders.

Diode Arrays Selection Notes

Select this component for low voltage, high frequency rectification tasks requiring robust surge handling. Ensure the thermal management design accommodates the specified junction temperature limits and thermal resistance values. Verify that the circuit requirements align with the 45 V reverse voltage rating and the 25 A total current capacity constraints defined in the datasheet.

Diode Arrays Part Context

This part belongs to the MBR25xxCT series of dual common cathode Schottky rectifiers. The series includes variants with different reverse voltage ratings, such as the 35 V MBR2535CT. The E3 suffix indicates RoHS compliance and adherence to specific whisker test standards. The HE3 designation typically denotes enhanced efficiency characteristics within the Vishay portfolio.

Diode Arrays Replacement Considerations

MBR2535CT-E3/45

Diode Arrays FAQ

What is the isolation voltage specification for the TO-220AB package?

The datasheet specifies an isolation voltage only for the ITO-220AB package, which is 1500 V AC. No isolation voltage rating is provided for the standard TO-220AB package.

How does the forward voltage drop vary with temperature?

The maximum instantaneous forward voltage decreases as temperature increases. It is rated at 0.82 V at 25 °C and drops to 0.73 V at 125 °C when tested at 30 A.

What is the maximum non-repetitive peak reverse energy rating?

The maximum non-repetitive peak reverse energy (ERSM) is rated at 25 mJ per diode, measured using an 8/20 μs waveform.

MBR2545CTHE3/45MBR2545CTHE3/45

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