MBR25H35CTHE3/45

Diode Arrays Overview

The MBR25H35CTHE3/45 is a dual common cathode Schottky rectifier manufactured by Vishay General Semiconductor. It utilizes High Barrier Technology to deliver improved high-temperature performance and low forward voltage drop. The device features a TO-220AB package with matte tin-plated leads. Key electrical parameters include a maximum repetitive peak reverse voltage of 35 V, a total maximum average forward rectified current of 30 A (15 A per diode), and a peak forward surge current of 150 A. It operates within a junction temperature range of -65 °C to +175 °C.

Diode Arrays Feature Summary

• High Barrier Technology for enhanced thermal stability
• Guardring structure provides overvoltage protection
• Low leakage current and forward voltage drop
• AEC-Q101 qualified for automotive reliability

Diode Arrays Applications

• Switching mode power supplies
• DC/DC converters
• Polarity protection circuits
• Freewheeling diodes in low voltage applications

Diode Arrays Procurement Notes

Verify the component status as this specific part number may be subject to discontinuation or lifecycle changes. Confirm that the HE3 suffix indicates AEC-Q101 qualification and compliance with JESD 201 class 2 whisker testing requirements. Ensure the TO-220AB package matches the design footprint before procurement.

Diode Arrays Selection Notes

Select this component for applications requiring dual common cathode configurations with high surge capability. The 35 V rating suits low-voltage rectification tasks. Consider the thermal resistance of 1.5 °C/W per diode for heat dissipation planning. Verify that the operating environment stays within the specified -65 °C to +175 °C junction temperature range.

Diode Arrays Part Context

This device belongs to the MBR25HxxCT series, which includes variants with different reverse voltage ratings such as 45 V, 50 V, and 60 V. All members share the same physical package and general electrical characteristics, differing primarily in their maximum repetitive peak reverse voltage specifications. The series is designed for high-frequency operation and efficiency.

Diode Arrays Replacement Considerations

Direct substitutes within the same family include MBR25H45CTHE3/45, MBR25H50CTHE3/45, and MBR25H60CTHE3/45. These parts maintain identical packaging and current ratings but offer higher reverse voltage capabilities. Ensure the circuit design can accommodate the increased voltage rating if substituting with a higher voltage variant.

Diode Arrays FAQ

What does the HE3 suffix indicate for this component?

The HE3 suffix denotes that the component is RoHS-compliant, AEC-Q101 qualified, and meets JESD 201 class 2 whisker test requirements.

Is the MBR25H35CTHE3/45 suitable for automotive applications?

Yes, the component is AEC-Q101 qualified, making it suitable for automotive electronics applications.

What is the maximum junction temperature for this device?

The maximum operating junction temperature is +175 °C.