MBR2X080A120

Diode Arrays Overview

The GeneSiC Semiconductor MBR2X080A120 is a silicon Schottky rectifier module housed in an SOT-227 isolation package. It features an electrically isolated base plate and supports average forward currents of 160 A per package with peak surge capabilities of 900 A per leg. The device offers a maximum repetitive reverse voltage of 120 V and operates within a junction temperature range of -40 to 150 °C. Key electrical characteristics include a maximum instantaneous reverse current of 3 mA at rated DC blocking voltage and a typical forward voltage drop of 0.76 V at 25 °C.

Diode Arrays Feature Summary

• High surge capability for robust transient handling
• Electrically isolated base plate design
• ESD non-sensitive construction

Diode Arrays Applications

• High-frequency power conversion circuits
• DC-DC converter freewheeling applications
• Industrial power supply rectification

Diode Arrays Procurement Notes

Verify the specific datasheet version and manufacturer documentation before integration, as component specifications may be subject to revision. Confirm that the SOT-227 package dimensions and terminal configurations align precisely with your printed circuit board layout and thermal management requirements. Ensure compliance with all relevant safety and isolation standards required for your final equipment assembly.

Diode Arrays Selection Notes

Select this module when high efficiency and low forward voltage drop are critical for system performance. The isolated base plate facilitates direct mounting to heatsinks without additional insulators, simplifying thermal design. Consider the 160 A average current rating and 120 V reverse voltage limits to ensure adequate headroom for your specific operating conditions and load profiles.

Diode Arrays Part Context

This component belongs to the MBR2X series of silicon power Schottky diode modules manufactured by GeneSiC Semiconductor. These modules are engineered for high-efficiency power control applications where fast switching and low conduction losses are prioritized over traditional PN-junction rectifiers.

Diode Arrays Replacement Considerations

Cross-reference with other SOT-227 packaged Schottky modules offering similar 120 V ratings and 160 A current capacities. Verify that any substitute maintains equivalent isolation voltage and thermal resistance characteristics to ensure compatibility with existing cooling solutions.

Diode Arrays FAQ

What is the maximum thermal resistance from junction to case?

The maximum thermal resistance from junction to case is 0.60 °C/W per leg.

Is the module sensitive to electrostatic discharge?

No, the MBR2X080A120 is explicitly designed to be not ESD sensitive.

What is the isolation voltage rating?

The module provides an isolation voltage (ViSO) of 2500 V AC for one minute.