MBR2X100A100

Diode Arrays Overview

The MBR2X100A100 is a silicon Schottky diode module manufactured by GeneSiC Semiconductor. It features an SOT-227 isolation package with an electrically isolated base plate. The device supports a maximum repetitive peak reverse voltage of 100 V and a maximum DC blocking voltage of 100 V. It provides an average forward current rating of 200 A per package. Key electrical parameters include a maximum RMS voltage of 70 V, a peak forward surge current of 1400 A per leg, and a maximum instantaneous reverse current of 1 mA at rated DC blocking voltage. Forward voltage characteristics are specified as 0.84 V at 100 A and 25 °C, decreasing to 0.75 V at 100 A and 125 °C. Thermal resistance from junction to case is 0.40 °C/W per leg. The module operates within a temperature range of -40 °C to +150 °C.

Diode Arrays Feature Summary

• High surge capability for robust transient handling
• Electrically isolated base plate for safety and mounting flexibility
• Not ESD sensitive for simplified handling

Diode Arrays Applications

• High-frequency power conversion circuits
• DC-DC converter freewheeling applications
• Uninterruptible power supply (UPS) systems

Diode Arrays Procurement Notes

Verify the manufacturer designation on official documentation, as some distributor listings may display Navitas Semiconductor due to corporate acquisition history. Confirm the specific SOT-227 package dimensions and terminal configuration match the design requirements before integration. Ensure that thermal management solutions account for the specified junction-to-case thermal resistance values under actual operating conditions.

Diode Arrays Selection Notes

Select this component when a high-current Schottky rectifier with low forward voltage drop is required in an isolated package format. The 200 A rating and 100 V breakdown voltage suit medium-voltage, high-power applications. Consider the 0.40 °C/W thermal resistance for heatsink calculations. Verify that the system's peak surge currents remain below the 1400 A limit per leg to ensure device reliability during fault conditions.

Diode Arrays Part Context

This module belongs to the MBR2X series of silicon power Schottky diodes designed for high-efficiency power electronics. The series utilizes an isolation type package architecture, distinguishing it from standard non-isolated modules. GeneSiC Semiconductor produces this line to provide reliable rectification solutions with enhanced thermal performance and electrical isolation capabilities for demanding industrial and commercial power supplies.

Diode Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes. Generic replacements must match the 200 A current rating, 100 V voltage rating, and SOT-227 package footprint. Verify that any alternative maintains equivalent thermal resistance and forward voltage characteristics to ensure circuit compatibility.