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MBR300100CTR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOT 100V 150A 2TOWER. Review the specifications below when checking this part for your BOM.
The GeneSiC Semiconductor MBR300100CTR is a silicon power Schottky diode module featuring a twin tower package configuration. It provides a repetitive peak reverse voltage of 100 V and an average forward current rating of 300 A per package. The device exhibits a maximum forward voltage of 0.84 V at a junction temperature of 100 °C and maintains a thermal resistance from junction to case of 0.40 °C/W per leg. Operating temperatures range from -55 °C to +150 °C, with a peak forward surge current capability of 2000 A.
Verify the specific suffix 'CTR' against official manufacturer documentation to confirm terminal orientation or lead configuration details, as datasheets indicate reversed leads for 'R' variants. Confirm RoHS compliance status through the supplier's product compliance reports before finalizing procurement orders.
Select this component when a 100 V blocking voltage and 300 A continuous current are required in a twin tower form factor. Ensure the application environment allows for adequate heatsinking to manage the 0.40 °C/W junction-to-case thermal resistance within the specified 150 °C maximum junction temperature limit.
This module belongs to the MBR300 series of silicon power Schottky rectifiers manufactured by GeneSiC Semiconductor. The series encompasses various voltage ratings from 45 V to 100 V, all sharing the same 300 A current rating and twin tower package style for standardized mechanical integration across different voltage requirements.
Direct replacements include MBR300100CT and MBR300100CTR. Verify that substitute parts maintain identical twin tower pinout configurations and thermal characteristics to ensure compatibility with existing board layouts and cooling systems.
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