Diode Arrays MBR300200CTR product image

MBR300200CTR

$66.98
  • Description:DIODE MOD SCHOT 200V 150A 2TOWER
  • Series:-

SKU:6a4c856be405 Category: Brand:

  
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MBR300200CTR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOT 200V 150A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR300200CTR

  • Description:DIODE MOD SCHOT 200V 150A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):200 V
  • Current - Average Rectified (Io) (per Diode):150A
  • Voltage - Forward (Vf) (Max) @ If:920 mV @ 150 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:3 mA @ 200 V
  • Operating Temperature - Junction:-40°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR300200CTR

MBR300200CTR

Diode Arrays Overview

The MBR300200CTR is a silicon power Schottky diode module from the GeneSiC Semiconductor MBR300 series. It features a Twin Tower package with a 150 V to 200 V repetitive peak reverse voltage rating and a 300 A average forward current per leg. The device exhibits a maximum forward voltage of 0.92 V at 150 A and a thermal resistance of 0.40 °C/W per leg. Operating junction temperature ranges from -55°C to 150°C, with a peak forward surge current capability of 2000 A.

Diode Arrays Feature Summary

  • High surge current capability for robust operation under transient conditions
  • ESD insensitive design for simplified handling and assembly
  • Twin Tower package configuration for efficient mounting

Diode Arrays Applications

  • High-frequency rectification in power conversion circuits
  • Free-wheeling diodes in DC-DC converters
  • Reverse polarity protection in high-current systems

Diode Arrays Procurement Notes

Verify the specific voltage rating (150 V or 200 V) required for the application, as the suffix indicates a variant within the MBR300150CT through MBR300200CTR range. Confirm terminal orientation, noting that devices with an 'R' suffix have reversed leads compared to standard configurations. Ensure compatibility with the Twin Tower mounting style during integration.

Diode Arrays Selection Notes

Select this component when a low forward voltage drop and high current capacity are critical for efficiency. The Twin Tower package facilitates direct heatsink mounting, reducing thermal impedance. Consider the 2000 A surge rating for applications with significant inrush currents. Verify that the operating temperature range meets the environmental requirements of the target system.

Diode Arrays Part Context

This part belongs to the MBR300 series of silicon power Schottky diode modules. The series offers various voltage ratings from 150 V to 200 V, all sharing the same 300 A current rating and Twin Tower package form factor. The 'CTR' suffix denotes a specific voltage variant within this family, distinguished by its electrical characteristics and lead configuration.

Diode Arrays Replacement Considerations

Compatible substitutes include other parts from the MBR300 series, such as MBR300150CT or MBR300200CT, provided the voltage rating and lead orientation match the circuit requirements. Cross-referencing the Twin Tower package dimensions is essential for mechanical fit.

MBR300200CTRMBR300200CTR
$66.98
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