MBR30020CTR

Diode Arrays Overview

The GeneSiC Semiconductor MBR30020CTR is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 20 V and an average forward current of 300 A per package. It features a maximum forward voltage of 0.70 V at Tj = 100 °C and a thermal resistance junction-case of 0.40 °C/W per leg. The device supports a peak forward surge current of 2000 A (8.3 ms half sine) and operates within a temperature range of -55 °C to +150 °C.

Diode Arrays Feature Summary

• High surge capability with a Twin Tower package design
• Not ESD sensitive

Diode Arrays Applications

• Power conversion systems requiring high current handling
• Industrial rectification applications
• DC-DC converter circuits

Diode Arrays Procurement Notes

Verify the specific part number suffix against official documentation, as the 'R' designation indicates reversed leads compared to standard configurations. Confirm availability status directly with authorized distributors or the manufacturer, as discontinuation notices may affect supply chain stability. Ensure thermal management solutions align with the specified junction-to-case thermal resistance parameters.

Diode Arrays Selection Notes

Select this component when a 20 V blocking voltage and 300 A continuous current rating are required in a screw-mountable Twin Tower package. Consider the 0.40 °C/W thermal resistance for heatsink calculations. Verify lead orientation requirements due to the reversed terminal configuration associated with the CTR suffix.

Diode Arrays Part Context

This module belongs to the MBR300 series of silicon power Schottky diodes from GeneSiC Semiconductor. The series offers various voltage ratings from 20 V to 40 V while maintaining consistent current and thermal characteristics across the lineup.

Diode Arrays Replacement Considerations

Cross-reference with other MBR300 series variants such as MBR30030CT or MBR30040CT if higher voltage ratings are acceptable. Verify pinout compatibility before substitution.