MBR30030CTR

$66.98

Description：DIODE MOD SCHOTT 30V 150A 2TOWER
Series：-

SKU:ddbc0afe6234 Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

MBR30030CTR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 30V 150A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR30030CTR

Description：DIODE MOD SCHOTT 30V 150A 2TOWER
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Anode
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：30 V
Current - Average Rectified (Io) (per Diode)：150A
Voltage - Forward (Vf) (Max) @ If：650 mV @ 150 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：8 mA @ 20 V
Operating Temperature - Junction：-55°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Twin Tower
Supplier Device Package：Twin Tower
Grade：-
Qualification：-

Diode Arrays datasheet and documents for MBR30030CTR

MBR30030CTR

Diode Arrays Overview

The GeneSiC Semiconductor MBR30030CTR is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 30 V and an average forward current of 300 A per package. It features a maximum forward voltage of 0.70 V at Tj = 100 °C and a thermal resistance of 0.40 °C/W per leg. The device operates within a junction temperature range of -55 °C to +150 °C and supports a peak forward surge current of 2000 A.

Diode Arrays Feature Summary

High surge capability with Twin Tower package design
Not ESD sensitive

Diode Arrays Applications

High current rectification in power conversion systems
Free-wheeling applications requiring low forward voltage drop
Industrial power modules utilizing screw mount installation

Diode Arrays Procurement Notes

Verify the specific suffix 'CTR' against official documentation, as datasheets indicate reversed leads for 'R' devices. Confirm manufacturer alignment between GeneSiC and Navitas Semiconductor records. Ensure the Twin Tower package dimensions match system requirements. Validate RoHS compliance status through the latest product specification sheet before procurement.

Diode Arrays Selection Notes

Select this component for applications requiring 300 A continuous current handling at 30 V blocking voltage. The 0.40 °C/W thermal resistance supports efficient heat dissipation in high-power environments. Consider the Twin Tower package for robust mechanical mounting. Verify that the 2000 A surge rating meets transient protection needs in the target circuit design.

Diode Arrays Part Context

This module belongs to the MBR300 series, which includes variants from 20 V to 40 V VRRM. All models share identical 300 A current ratings and 0.70 V forward voltage characteristics. The series utilizes a common Twin Tower package format designed for high reliability in industrial power electronics applications.