Diode Arrays MBR30035CT product image

MBR30035CT

$66.98
  • Description:DIODE MOD SCHOTT 35V 150A 2TOWER
  • Series:-

SKU:ca327a7978ec Category: Brand:

  
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MBR30035CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 35V 150A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR30035CT

  • Description:DIODE MOD SCHOTT 35V 150A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):35 V
  • Current - Average Rectified (Io) (per Diode):150A
  • Voltage - Forward (Vf) (Max) @ If:650 mV @ 150 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:8 mA @ 20 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR30035CT

MBR30035CT

Diode Arrays Overview

The GeneSiC Semiconductor MBR30035CT is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 35 V and an average forward current of 300 A per package. It features a twin tower configuration with two electrically isolated legs, each capable of handling a maximum forward surge current of 2000 A. The device operates within a junction temperature range of -55 °C to +150 °C and exhibits a maximum forward voltage drop of 0.70 V at 150 A.

Diode Arrays Feature Summary

  • High surge current capability designed for robust transient protection
  • Twin tower package structure providing electrical isolation between legs
  • Low forward voltage drop for improved efficiency in high-frequency applications

Diode Arrays Applications

  • Low voltage, high frequency rectification in switching mode power supplies
  • Freewheeling diodes in DC-to-DC converters
  • Polarity protection circuits requiring high current handling

Diode Arrays Procurement Notes

Verify the specific suffix (e.g., R) against official documentation, as it may indicate reversed leads or other physical variations. Confirm thermal management requirements align with the specified junction-to-case thermal resistance. Ensure sourcing channels provide valid traceability for this discontinued or legacy component series.

Diode Arrays Selection Notes

Select this module when designing systems requiring high current density and low conduction losses at low voltages. The twin tower design allows for independent circuit paths or parallel operation considerations. Evaluate thermal dissipation capabilities based on the 0.40 °C/W junction-to-case resistance per leg under expected operating conditions.

Diode Arrays Part Context

This component belongs to the MBR300 series of silicon power Schottky diodes from GeneSiC Semiconductor. The series encompasses ratings from 20 V to 40 V reverse voltage, maintaining a consistent 300 A average forward current rating across variants. It utilizes a specialized twin tower package optimized for high-power industrial and commercial applications.

Diode Arrays Replacement Considerations

Direct substitutes include MBR30020CT, MBR30030CT, and MBR30040CT from the same manufacturer family. Verify pinout compatibility and thermal characteristics before substitution.

MBR30035CTMBR30035CT
$66.98
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