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MBR30L60CTH is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is DIODE ARR SCHOTT 60V 30A TO220AB. Review the specifications below when checking this part for your BOM.
The MBR30L60CTH is a silicon Schottky barrier rectifier manufactured by Taiwan Semiconductor Corporation. It features a dual common cathode configuration housed in a TO-220AB package. The device is rated for a repetitive reverse voltage of 60 V and an average forward current of 30 A. Key electrical parameters include a maximum forward voltage of 850 mV at 15 A, a peak forward surge current of 400 A, and a maximum reverse leakage current of 10 mA at 60 V. It operates within a junction temperature range of -55 °C to +175 °C.
Verify the specific suffix 'H' against the official Taiwan Semiconductor datasheet to confirm package variations or marking codes. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure the supplier provides valid traceability documentation for this discontinued or legacy component series.
Select this component for applications requiring high efficiency and low forward voltage drop at moderate currents. The TO-220AB package facilitates direct mounting to heat sinks. Compare the 30 A rating against circuit load requirements and ensure the 60 V breakdown voltage exceeds the maximum reverse voltage stress in the design.
This part belongs to the MBR30L60CT family of Schottky rectifiers from Taiwan Semiconductor. It serves as a high-efficiency alternative to standard PN-junction rectifiers in power conversion topologies. The device is engineered to minimize conduction losses while maintaining reliable operation under high-temperature conditions typical in industrial power electronics.
Cross-reference with MBR30L60CTG from onsemi for pin-compatible alternatives. Verify that substitute devices match the 60 V reverse voltage and 30 A current ratings. Ensure the replacement maintains the same TO-220AB mechanical footprint and thermal characteristics.
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