Diode Arrays MBR40035CTL product image

MBR40035CTL

$40.38
  • Description:DIODE MOD SCHOTT 35V 200A 2TOWER
  • Series:-

SKU:794601e6b7e0 Category: Brand:

  
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MBR40035CTL is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 35V 200A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR40035CTL

  • Description:DIODE MOD SCHOTT 35V 200A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):35 V
  • Current - Average Rectified (Io) (per Diode):200A
  • Voltage - Forward (Vf) (Max) @ If:600 mV @ 200 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:3 mA @ 35 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR40035CTL

MBR40035CTL

Diode Arrays Overview

The MBR40035CTL is a silicon Schottky rectifier module rated for a maximum DC blocking voltage of 35 V and an average forward current of 400 A per package. It features a maximum instantaneous forward voltage of 0.60 V at Tc = 100 °C and a peak forward surge current capability of 3000 A per leg. The device operates within a junction temperature range of -55 to 150 °C, with a storage temperature range of -55 to 150 °C. Thermal resistance from junction to case is 0.35 °C/W per leg.

Diode Arrays Feature Summary

  • Utilizes Schottky barrier technology for low forward voltage drop and high switching efficiency.
  • Designed for high-power applications requiring robust thermal management and high current handling capabilities.
  • Features a rugged construction suitable for demanding industrial environments.

Diode Arrays Applications

  • High-current DC power supplies
  • Industrial motor drives
  • Uninterruptible power systems (UPS)

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official GeneSiC Semiconductor documentation to ensure correct packaging and terminal configuration. Confirm availability status as distribution channels may vary. Cross-reference electrical parameters with the latest datasheet before integration into designs.

Diode Arrays Selection Notes

Select this component based on its 400 A average forward current rating and 35 V reverse voltage capability. Ensure the application design accommodates the specified thermal resistance of 0.35 °C/W per leg to maintain junction temperatures within the -55 to 150 °C operating range during continuous operation.

Diode Arrays Part Context

This part belongs to the MBR series of silicon Schottky rectifiers manufactured by GeneSiC Semiconductor. These modules are engineered for high-efficiency power conversion in heavy-duty applications, offering superior performance compared to standard PN junction diodes due to their fast switching characteristics and low conduction losses.

Diode Arrays Replacement Considerations

Consult official GeneSiC Semiconductor substitution guides for verified equivalent parts. Do not assume compatibility with other manufacturers' modules without verifying pinout, thermal resistance, and electrical ratings against the original datasheet specifications.

Diode Arrays FAQ

What is the maximum thermal resistance from junction to case?

The maximum thermal resistance from junction to case is 0.35 °C/W per leg.

What is the peak forward surge current rating?

The peak forward surge current is 3000 A per leg under conditions of IFM = 200 A and Tj = 25 °C with an 8.3 ms half-sine pulse.

MBR40035CTLMBR40035CTL
$40.38
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