Diode Arrays MBR40060CTR product image

MBR40060CTR

$70.04
  • Description:DIODE MOD SCHOTT 60V 200A 2TOWER
  • Series:-

SKU:e614589e89d4 Category: Brand:

  
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MBR40060CTR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 60V 200A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR40060CTR

  • Description:DIODE MOD SCHOTT 60V 200A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):60 V
  • Current - Average Rectified (Io) (per Diode):200A
  • Voltage - Forward (Vf) (Max) @ If:800 mV @ 200 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:5 mA @ 20 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR40060CTR

MBR40060CTR

Diode Arrays Overview

The GeneSiC Semiconductor MBR40060CTR is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 60 V and an average forward current of 400 A per package. It features a Twin Tower screw-mount package with a maximum forward voltage of 0.75 V at Tj = 150 °C. The device supports an operating temperature range from -55 °C to +150 °C, with a thermal resistance of 0.35 °C/W per leg. It offers a peak forward surge current capability of 3000 A.

Diode Arrays Feature Summary

  • High surge current capability designed for robust power applications
  • Twin Tower package configuration optimized for efficient thermal management
  • Non-ESD sensitive construction for simplified handling

Diode Arrays Applications

  • Switching-mode power supplies
  • Free-wheeling rectification in high-current circuits
  • DC-DC converters requiring low forward voltage drop

Diode Arrays Procurement Notes

Verify the specific suffix 'CTR' against official documentation to confirm terminal orientation, as datasheets indicate reversed leads for 'R' devices. Confirm RoHS compliance status through manufacturer declarations. Ensure procurement channels are authorized to guarantee component authenticity and traceability for critical power electronics assemblies.

Diode Arrays Selection Notes

Select this module when a 60 V rating and 400 A continuous current capacity are required within a Twin Tower form factor. Consider the 0.35 °C/W junction-to-case thermal resistance for heatsink design. Evaluate the 0.75 V forward voltage at elevated temperatures for efficiency calculations in high-power conversion systems.

Diode Arrays Part Context

This component belongs to the MBR400 series of silicon power Schottky diodes, which spans ratings from 45 V to 100 V. The series utilizes a standardized Twin Tower package architecture to provide consistent mechanical mounting and thermal performance across varying voltage and current specifications within the same product family.

Diode Arrays Replacement Considerations

Cross-reference with MBR40060CT for identical electrical characteristics but verify lead orientation differences between standard and reversed configurations.

MBR40060CTRMBR40060CTR
$70.04
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