MCH3476-TL-HX

Single FETs, MOSFETs Overview

The MCH3476-TL-HX is an N-channel enhancement mode MOSFET manufactured by onsemi. It features a 20 V drain-source breakdown voltage and supports a continuous drain current of 2 A. The device exhibits a maximum drain-source on-resistance of 310 mΩ and operates with a gate-source threshold voltage up to 1.3 V. Power dissipation is rated at 800 mW, with a maximum operating temperature of +150 °C. It utilizes the MCHP surface-mount package.

Single FETs, MOSFETs Feature Summary

• N-channel enhancement mode operation
• Low gate threshold voltage for efficient drive
• High-temperature reliability up to +150 °C

Single FETs, MOSFETs Applications

• General-purpose switching applications
• Low-voltage power management circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'HX' against official documentation to confirm tape-and-reel packaging details. Confirm RoHS compliance status and ensure the component matches the MCHP package dimensions. Check for obsolescence notices as availability may vary.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage switching tasks requiring a 20 V rating and 2 A current capacity. Ensure the driving circuit can accommodate the specified gate threshold voltage. Verify thermal management requirements given the 800 mW power dissipation limit in the small MCHP package.

Single FETs, MOSFETs Part Context

This part belongs to the onsemi discrete MOSFET portfolio, designed for compact surface-mount implementations. The MCHP package provides a small footprint suitable for space-constrained designs. It serves as a standard solution for general-purpose low-side switching in consumer and industrial electronics.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for verified equivalents. Cross-reference parameters such as Rds(on), Vgs(th), and package type when evaluating alternatives.