Single Bipolar Transistors MJD3055T4 product image

MJD3055T4

$0.74
  • Description:TRANS NPN 60V 10A DPAK
  • Series:-

SKU:28f65e3e3061 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

MJD3055T4 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 60V 10A DPAK. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MJD3055T4

  • Description:TRANS NPN 60V 10A DPAK
  • Series:-
  • Mfr:onsemi
  • Package:Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):10:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:1.1V @ 400mA, 4A
  • Current - Collector Cutoff (Max):50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 4A, 4V
  • Power - Max:20 W
  • Frequency - Transition:2MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:DPAK
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for MJD3055T4

MJD3055T4

Single Bipolar Transistors Overview

The MJD3055T4 is a single NPN power bipolar junction transistor manufactured by onsemi using planar technology with a base island layout. It is housed in a surface-mount DPAK (TO-252) package. Key electrical parameters include a maximum collector-emitter voltage of 60 V, a continuous collector current of 10 A, and a power dissipation rating of 20 W. The device features a minimum DC current gain of 20 at 4 A and 4 V, with a transition frequency of 2 MHz.

Single Bipolar Transistors Feature Summary

  • Utilizes planar technology with a base island layout to achieve high gain performance.
  • Designed for low saturation voltage operation to improve efficiency.
  • Available in a surface-mount DPAK package suitable for automated assembly.

Single Bipolar Transistors Applications

  • High-current switching applications
  • Power amplifier circuits
  • Motor control systems

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official documentation, as variations may exist between tape-and-reel and cut-tape packaging formats. Confirm RoHS compliance status through the manufacturer's material declaration. Ensure the ordering part number matches the exact package type and electrical specifications required for the design.

Single Bipolar Transistors Selection Notes

Select this component when a robust NPN power transistor with a 60 V rating and 10 A current capacity is needed in a surface-mount form factor. The base island construction offers advantages in gain and saturation characteristics compared to standard planar designs. Evaluate thermal management requirements based on the 20 W dissipation limit in the TO-252 package.

Single Bipolar Transistors Part Context

This device belongs to the MJD3055 series of power transistors. It serves as a surface-mount alternative to through-hole equivalents like the MJE3055T. The component is categorized under bipolar junction transistors and is intended for general-purpose power switching and amplification tasks within electronic systems.

Single Bipolar Transistors Replacement Considerations

The MJD3055T4 is electrically similar to the MJE3055T. Verify pinout compatibility and thermal resistance values when substituting with other NPN power transistors in the same voltage and current class.

MJD3055T4MJD3055T4
$0.74
Buy Now

Recent News