Single Bipolar Transistors MJE172STU product image

MJE172STU

  • Description:TRANS PNP 80V 3A TO-126-3
  • Series:-

SKU:5dc2e8666e9e Category: Brand:

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MJE172STU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 80V 3A TO-126-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MJE172STU

  • Description:TRANS PNP 80V 3A TO-126-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:1.7V @ 600mA, 3A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 100mA, 1V
  • Power - Max:1.5 W
  • Frequency - Transition:50MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for MJE172STU

MJE172STU

Single Bipolar Transistors Overview

The MJE172STU is a PNP silicon power transistor manufactured by onsemi, housed in a TO-126-3 (TO-225AA) through-hole package. It features a maximum collector-emitter voltage of 80 V and a continuous collector current rating of 3 A. The device has a maximum power dissipation of 1.5 W and a transition frequency of 50 MHz. DC current gain is specified with a minimum of 12 at 1.5 A and 50 at 100 mA. The saturation voltage is 1.7 V max at 3 A collector current. Operating junction temperature reaches 150°C.

Single Bipolar Transistors Feature Summary

  • Annular construction designed to minimize leakage currents
  • Epoxy casing meets UL 94 V-0 flammability standards
  • Optimized for low power audio amplifier applications
  • Suitable for low current, high speed switching tasks

Single Bipolar Transistors Applications

  • Low power audio amplifiers
  • Low current high speed switching circuits
  • General purpose power transistor stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix STU against the latest official datasheet to confirm pinout and packaging details. Confirm RoHS compliance status as manufacturing practices evolve. Check for obsolescence notices from onsemi before finalizing designs. Ensure thermal management aligns with the 1.5 W dissipation limit in the TO-126 package.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring a 3 A PNP switch or amplifier stage. Compare hFE requirements against the minimum specifications at intended operating currents. Consider the TO-126 package size for board space constraints. Evaluate thermal resistance if mounting without an external heatsink.

Single Bipolar Transistors Part Context

This part belongs to the MJE17x series of complementary plastic silicon power transistors. The series includes NPN counterparts like the MJE170/180 variants. These devices are engineered for robust performance in audio and switching environments. The MJE172 specifically provides the 80 V breakdown voltage variant within this family.

Single Bipolar Transistors Replacement Considerations

MJE172G is a parameter equivalent replacement. BD140G serves as a similar alternative. 2N4920G is another comparable option.

MJE172STUMJE172STU

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