MJE703

$0.23

Description：TRANS PNP DARL 80V 4A TO-126
Series：-

SKU:e426d68df768 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

MJE703 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP DARL 80V 4A TO-126. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MJE703

Description：TRANS PNP DARL 80V 4A TO-126
Series：-
Mfr：onsemi
Package：Bulk
Transistor Type：PNP - Darlington
Current - Collector (Ic) (Max)：4:00 AM
Voltage - Collector Emitter Breakdown (Max)：80 V
Vce Saturation (Max) @ Ib, Ic：2.8V @ 40mA, 2A
Current - Collector Cutoff (Max)：100µA
DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 2A, 3V
Power - Max：40 W
Frequency - Transition：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-225AA, TO-126-3
Supplier Device Package：TO-126
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for MJE703

MJE703

Single Bipolar Transistors Overview

The MJE703 is a PNP plastic Darlington power transistor from onsemi, designed for general-purpose amplifier and low-speed switching applications. It features monolithic construction with built-in base-emitter resistors to limit leakage multiplication. The device supports a collector current of 4.0 A and offers high DC current gain, typically 2000 at 2.0 A. It operates within a junction temperature range of -55°C to +150°C and provides a maximum power dissipation of 40 W at 25°C case temperature.

Single Bipolar Transistors Feature Summary

High DC Current Gain
Monolithic Construction
Built-in Base-Emitter Resistors

Single Bipolar Transistors Applications

General-purpose amplifiers
Low-speed switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix (e.g., G) against the datasheet to confirm package type and compliance status. Confirm availability as distribution channels may vary. Ensure thermal management meets the specified derating curves for the intended operating environment.

Single Bipolar Transistors Selection Notes

Select based on required collector current and voltage ratings relative to the circuit load. Consider the high input impedance provided by the Darlington configuration for drive requirements. Evaluate thermal resistance characteristics to ensure adequate heat sinking for sustained operation.

Single Bipolar Transistors Part Context

This component belongs to the MJE700 series of complementary silicon power transistors. It is the PNP counterpart to the NPN MJE803. The series is characterized by robust power handling capabilities suitable for industrial and consumer electronics requiring reliable switching or amplification.