Single Bipolar Transistors MMST5551-TP product image

MMST5551-TP

$0.20
  • Description:TRANS NPN 160V 0.2A SOT-323
  • Series:-

SKU:576a82a9806a Category: Brand:

  
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MMST5551-TP is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is TRANS NPN 160V 0.2A SOT-323. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MMST5551-TP

  • Description:TRANS NPN 160V 0.2A SOT-323
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):200 mA
  • Voltage - Collector Emitter Breakdown (Max):160 V
  • Vce Saturation (Max) @ Ib, Ic:200mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • Power - Max:200 mW
  • Frequency - Transition:300MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SOT-323
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for MMST5551-TP

MMST5551-TP

Single Bipolar Transistors Overview

The MMST5551-TP is an NPN small signal transistor manufactured by Micro Commercial Components (MCC). It utilizes silicon technology and is housed in a SOT-323-3 surface-mount package. Key electrical ratings include a collector-emitter breakdown voltage of 160 V, a collector-base voltage of 180 V, and an emitter-base voltage of 6 V. The device supports a maximum DC collector current of 600 mA with a power dissipation capacity of 200 mW at 25°C ambient temperature. It features a transition frequency of 100 MHz and operates within a junction temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

  • Designed for high-voltage switching applications with a 160 V collector-emitter breakdown rating.
  • Optimized for low-power consumption with a 200 mW power dissipation limit.
  • Constructed using silicon planar epitaxial processes for reliable performance.
  • Encapsulated in molded plastic meeting UL 94 V-0 flammability standards.

Single Bipolar Transistors Applications

  • General-purpose switching circuits
  • Low-power amplifier stages
  • Voltage regulation control loops

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official MCC documentation to confirm RoHS compliance and halogen-free status. Ensure the ordering code matches the required packaging format, such as cut tape or reel, as specified in the manufacturer's latest datasheet. Cross-reference the part number with authorized distributors to confirm current availability and authenticity before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a compact NPN transistor with high voltage tolerance is required for space-constrained designs. The SOT-323-3 package offers a smaller footprint compared to standard SOT-23 variants while maintaining similar electrical characteristics. Consider the 100 MHz transition frequency for moderate-speed signal processing tasks where low power dissipation is a priority.

Single Bipolar Transistors Part Context

This component belongs to the MMST5551 series of NPN small signal transistors produced by Micro Commercial Components. It serves as a compact alternative to larger packages like SOT-23, providing equivalent functionality in a reduced form factor. The series is designed for general-purpose electronic applications requiring reliable switching and amplification capabilities within strict power and size constraints.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing circuit designs before considering alternative manufacturers or pin-compatible devices from other suppliers.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the MMST5551-TP?

The maximum collector-emitter breakdown voltage (VCEO) is 160 V.

Does the MMST5551-TP meet RoHS standards?

Yes, the TP suffix designates that the component is RoHS compliant according to Micro Commercial Components specifications.

What is the operating temperature range for this transistor?

The operating and storage junction temperature range is from -55°C to +150°C.

MMST5551-TPMMST5551-TP
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