MPSA13RA

Single Bipolar Transistors Overview

The MPSA13RA is an NPN Darlington transistor manufactured by onsemi, housed in a TO-92 package. It features a collector-emitter voltage of 30 V and a continuous collector current of 1.2 A. The device provides high DC current gain, with a minimum of 5,000 at 10 mA and 10,000 at 100 mA. Key electrical parameters include a collector cutoff current of 100 nA, saturation voltage of 1.5 V, and a transition frequency of 125 MHz. Total power dissipation is rated at 625 mW, operating within a junction temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Designed for applications requiring extremely high current gain at collector currents up to 1.0 A
• NPN epitaxial planar construction optimized for general-purpose switching and amplification
• Robust thermal performance with low thermal resistance from junction to ambient

Single Bipolar Transistors Applications

• High-gain amplifier circuits
• General-purpose switching applications
• Driver stages for relays or motors

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'RA' against official datasheets to confirm packaging type, as standard MPSA13 devices may vary in reel or tape specifications. Confirm component status, as some variants are marked obsolete. Ensure the source document explicitly lists MPSA13RA to validate availability and exact pinout configuration before procurement.

Single Bipolar Transistors Selection Notes

Select this component when high current gain is critical for driving loads directly from logic outputs. The TO-92 package suits through-hole designs. Compare saturation voltage and breakdown voltage requirements against load conditions. Verify that the 1.2 A continuous current rating exceeds peak operational demands to ensure reliability under thermal stress.

Single Bipolar Transistors Part Context

The MPSA13 series consists of NPN silicon Darlington transistors designed for high-gain applications. Manufactured originally by Fairchild Semiconductor and now associated with onsemi, these devices utilize epitaxial planar processes. The MPSA13RA variant specifically denotes the commercial packaging format within the broader MPSA13 family.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include MPSA13RLRP and MPSA13RLRA. Verify pinout compatibility and electrical ratings match the original design requirements before substitution.

Single Bipolar Transistors FAQ

What is the maximum continuous collector current for the MPSA13RA?

The maximum continuous collector current (IC) is 1.2 A.

Does the MPSA13RA support operation at elevated temperatures?

Yes, the device operates within a junction temperature range of -55°C to +150°C.

What is the typical DC current gain at 100 mA?

The minimum DC current gain (hFE) is 10,000 when IC is 100 mA and VCE is 5.0 V.