MPSA43G

Single Bipolar Transistors Overview

The MPSA43G is a single NPN silicon high-voltage transistor manufactured by onsemi. It features a collector-emitter voltage (VCEO) of 200 V and a continuous collector current (IC) of 100 mA. The device operates within a junction temperature range of -55 °C to +150 °C and offers a minimum DC current gain (hFE) of 40. Designed for through-hole mounting, it utilizes the TO-92 package form factor.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability suitable for demanding circuit environments
• Low collector-emitter saturation voltage for efficient switching performance
• Complementary PNP types available in the series

Single Bipolar Transistors Applications

• General-purpose amplification circuits
• Switching applications requiring high voltage tolerance
• Driver stages in consumer electronics

Single Bipolar Transistors Procurement Notes

Verify component authenticity against official onsemi datasheets due to potential availability constraints. Confirm RoHS compliance status and specific manufacturing lot details prior to integration. Ensure thermal management aligns with the specified maximum junction temperature limits during operation.

Single Bipolar Transistors Selection Notes

Select this component when a robust NPN transistor with 200 V blocking capability is required. The TO-92 package suits low-power through-hole designs. Consider complementary PNP variants if push-pull configurations are necessary for the specific application topology.

Single Bipolar Transistors Part Context

This part belongs to the MPSA43 family of high-voltage transistors. It serves as the NPN counterpart to PNP devices like the MPSA92. The series is engineered for general-purpose use where high voltage isolation and reliable switching are primary design requirements.

Single Bipolar Transistors Replacement Considerations

Official complementary substitutes include the MPSA92 (PNP). Cross-manufacturer equivalents such as the MMBTA42LT1 may be evaluated based on pin compatibility and electrical parameter alignment.