MRH10N22U3SR

Single FETs, MOSFETs Overview

The MRH10N22U3SR is a 100V N-Channel Radiation-Hardened MOSFET utilizing Microchip M6 technology. It features a maximum drain-source breakdown voltage of 100V and a continuous drain current of 22A at 25°C case temperature. The device exhibits a maximum on-resistance of 0.042Ω and a total gate charge of 50nC. Designed for extreme environments, it withstands total ionizing doses exceeding 300Krad (Si) and offers single-event hardened performance.

Single FETs, MOSFETs Feature Summary

• Hermetically sealed ceramic package designed for space and military applications
• Radiation hardening providing resilience against total ionizing dose and single-event effects
• Low on-resistance and low gate charge optimized for fast switching efficiency
• Surface-mount design with simple drive requirements and ease of paralleling

Single FETs, MOSFETs Applications

• DC–DC Converters
• Motor Control
• Switch Mode Power Supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific radiation hardness level required for the target mission environment before procurement. Confirm that the JANSR screening level aligns with project specifications. Ensure thermal management solutions accommodate the specified power dissipation and junction temperature limits during operation.

Single FETs, MOSFETs Selection Notes

Select this component for high-reliability power switching in harsh radiation environments. Evaluate the thermal resistance characteristics to ensure adequate heat sinking for the intended duty cycle. Consider the single-event safe-operating area when designing circuits subject to heavy ion exposure or high transient voltages.

Single FETs, MOSFETs Part Context

This part belongs to Microchip's family of radiation-hardened power MOSFETs developed using M6 technology. It serves as a specialized alternative to standard commercial transistors in aerospace and defense sectors where reliability under ionizing radiation is critical. The internal designation MRH10N22U3 corresponds to the JANSR2N7587U3 ordering option.

Single FETs, MOSFETs Replacement Considerations

JANSR2N7587U3

Single FETs, MOSFETs FAQ

What is the maximum total ionizing dose tolerance?

The device is designed to remain within specification in radiation environments greater than 300Krad Total Ionizing Dose (TID).

Is the device susceptible to single-event burnout?

The device is single-event hardened. Safe-operating area profiles are established to prevent single-event burnout and gate rupture under heavy ion exposure.