MSR622BJC288-12

Memory IC Overview

The MSR622BJC288-12 is a high-performance RLDRAM memory integrated circuit manufactured by MoSys, Inc. It provides a total storage capacity of 576 Mbit organized for parallel data access. The device features a fast access time of 3.2 ns, enabling rapid data retrieval for demanding applications. It is housed in a 288-pin FCBGA package with dimensions of 19x19 mm, designed for surface-mount assembly. This component integrates intelligent in-memory computing capabilities through the BLAZAR BE2-BURST Accelerator Engine, which optimizes memory access patterns to enhance system efficiency.

Memory IC Feature Summary

• Integrates BLAZAR BE2-BURST Accelerator Engine for intelligent in-memory computing
• Supports parallel interface architecture for high-speed data transfer
• Replaces multiple traditional memory accesses with single function operations

Memory IC Applications

• High-bandwidth networking equipment
• Telecommunications infrastructure systems
• Enterprise server memory subsystems

Memory IC Procurement Notes

Verify the specific suffix and pinout configuration against the official MoSys datasheet before integration. Ensure compatibility with the host controller's RLDRAM interface requirements. Confirm that the 288-FCBGA package thermal and mechanical specifications meet the design constraints. Cross-reference the part number with authorized distributors to ensure authenticity and traceability.

Memory IC Selection Notes

Select this component when system designs require high-density memory with low latency and intelligent burst acceleration. The 576 Mbit capacity and 3.2 ns speed suit applications needing substantial bandwidth without excessive power consumption. Consider the FCBGA package size for PCB layout constraints. Evaluate the need for in-memory computing features to reduce processor overhead.

Memory IC Part Context

This part belongs to the MSR series of RLDRAM devices from MoSys, Inc., known for combining memory and logic functions. The series utilizes proprietary BLAZAR technology to improve performance over standard SRAM or DRAM solutions. The MSR622 variant specifically targets high-throughput environments where memory access bottlenecks are critical.

Memory IC Replacement Considerations

Check for direct substitutes within the MSR622 family, such as different speed grades or voltage variants. Verify pin-to-pin compatibility if replacing with other MoSys RLDRAM parts. Ensure any alternative maintains the 288-FCBGA form factor and 576 Mbit density.