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MSR630AGE-2512 is listed in the Memory IC range at ChipApex. The manufacturer field lists MoSys, Inc.. Its product description is IC SRAM 1GBIT PAR 676BGA. Review the specifications below when checking this part for your BOM.
The MSR630AGE-2512 is a high-performance synchronous burst SRAM memory IC manufactured by MoSys, Inc. It features a 1 Gbit capacity organized as 16M x 72 bits, providing enhanced data integrity through error correction capabilities. The device operates with a parallel interface and supports clock frequencies up to 1.25 GHz, enabling high-speed data throughput for demanding applications. It is housed in a 676-ball BGA package measuring 27x27 mm, designed for compact board layouts while maintaining signal integrity.
Verify the specific suffix 'AGE-2512' against official MoSys documentation to confirm pinout, voltage levels, and temperature range specifications. Ensure compatibility with system power requirements and thermal management solutions before procurement. Cross-reference part numbers with authorized distributors to avoid counterfeit components.
Select this component when high bandwidth and low latency are critical for system performance. The 72-bit organization suits applications requiring robust error handling. Evaluate board space constraints due to the 676-ball BGA footprint and ensure PCB design supports high-frequency signal routing for the 1.25 GHz interface.
This part belongs to the MoSys MSR series of synchronous burst SRAMs, which integrate controller logic with SRAM arrays to simplify system design. The series targets applications requiring high throughput and deterministic timing. The MSR630 variant specifically offers 1 Gbit density within this family.
Consult official MoSys substitution guides for compatible alternatives. Verify electrical parameters and pin compatibility before replacing with other SRAM devices.
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