MSR820BJE288-12

Memory IC Overview

The MSR820BJE288-12 is a synchronous Rambus Direct RAM (RLDRAM) memory integrated circuit manufactured by MoSys, Inc. It provides a total storage capacity of 576 Mbit organized as 32 Meg words by 18 bits. The device features a parallel interface with a maximum access time of 3.2 ns and operates at a supply voltage of 3.3 V. It is housed in a 288-ball Flip Chip Ball Grid Array (FCBGA) package measuring 19x19 mm.

Memory IC Feature Summary

• Supports high-speed parallel data transfer via RLDRAM architecture
• Integrated on-die termination for signal integrity
• Designed for low power consumption in active and standby modes

Memory IC Applications

• High-bandwidth networking equipment
• Telecommunications infrastructure systems
• Industrial automation controllers

Memory IC Procurement Notes

Verify the specific suffix '12' against the manufacturer's official datasheet to confirm the speed grade and timing parameters match your system requirements. Ensure the FCBGA package footprint and pinout are compatible with your PCB layout before finalizing procurement.

Memory IC Selection Notes

Select this component when a dense, high-speed SRAM solution is required for bandwidth-intensive applications. Compare the 3.2 ns access time and 3.3 V operation against alternative RLDRAM or SDRAM options to ensure compatibility with existing controller interfaces and power supplies.

Memory IC Part Context

This part belongs to the MSR820 series of RLDRAM devices from MoSys, Inc., designed for performance-critical embedded memory applications. The series typically includes variants with different speed grades and organizational configurations, all sharing the same FCBGA package form factor for design flexibility.

Memory IC Replacement Considerations

Direct replacements may include other MSR820 series variants such as the MSR820BJE288-10, provided the timing specifications meet the system's clock requirements. Verify electrical compatibility and pinout alignment before substitution.