MSR830AGE-1512

Memory IC Overview

The MSR830AGE-1512 is a high-performance SRAM IC manufactured by MoSys, Inc., utilizing RLDRAM technology. It offers a total memory capacity of 1Gbit organized as 16M x 72 bits. The device features a parallel interface with a typical access time of 2.7 ns. It is housed in a 1512-FCBGA package measuring 27x27 mm.

Memory IC Feature Summary

• Utilizes RLDRAM architecture for high-speed data processing
• Supports parallel interface for efficient data transfer
• High-density 1Gbit storage capacity

Memory IC Applications

• Bandwidth engine applications
• High-access memory systems
• Serial burst memory interfaces

Memory IC Procurement Notes

Verify the manufacturer designation as MoSys, Inc., or its successor entities such as Peraso, depending on the production date and corporate restructuring history. Confirm the specific package type is 1512-FCBGA (27x27) to ensure mechanical compatibility. Cross-reference the part number suffix '1512' with official datasheets to validate the pinout and electrical specifications against your system requirements.

Memory IC Selection Notes

Select this component when a parallel SRAM solution with 1Gbit density and sub-3ns access times is required. Ensure the host system supports the 16M x 72 organization and FCBGA form factor. Consider the RLDRAM interface protocol compatibility with the controller before integration.

Memory IC Part Context

This component belongs to the MSR series of memory ICs from MoSys, designed for bandwidth-intensive applications. The series typically includes variants like the MSR830AGC-1512, differing primarily in package or speed grades. These devices are engineered for high-throughput data handling in networking and telecommunications infrastructure.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with any alternative RLDRAM-based SRAMs through detailed electrical and timing parameter comparison.