Memory IC MT47H128M8HQ-187E:E TR product image

MT47H128M8HQ-187E:E TR

  • Description:IC DRAM 1GBIT PAR 60FBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:7f228661ca48 Category: Brand:

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MT47H128M8HQ-187E:E TR is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC DRAM 1GBIT PAR 60FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for MT47H128M8HQ-187E:E TR

  • Description:IC DRAM 1GBIT PAR 60FBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:SDRAM - DDR2
  • Memory Size:1Gbit
  • Memory Organization:128M x 8
  • Memory Interface:Parallel
  • Clock Frequency:533 MHz
  • Write Cycle Time - Word, Page:15ns
  • Voltage - Supply:1.7V ~ 1.9V
  • Operating Temperature:0°C ~ 85°C (TC)
  • Mounting Type:Surface Mount
  • Package / Case:60-FBGA
  • Supplier Device Package:60-FBGA (8x11.5)
  • Access Time:350 ps
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for MT47H128M8HQ-187E:E TR

MT47H128M8HQ-187E:E TR

Memory IC Overview

The MT47H128M8HQ-187E:E TR is a Micron Technology DDR2 SDRAM with a 1Gb density and 128 Meg x 8 organization. It operates at a cycle time of 1.875ns (DDR2-1066) with CL=7, supporting data rates up to 1066 MT/s. The device uses a 60-ball FBGA package (8mm x 11.5mm) and requires VDD/VDDQ voltages of 1.8V ±0.1V. It features an 8-bank architecture, SSTL_18 I/O, differential DQS, and on-die termination.

Memory IC Feature Summary

  • Supports high-speed operation up to 1066 MT/s with a 1.875ns cycle time
  • Features eight internal banks for concurrent operations
  • Includes differential data strobe (DQS, DQS#) and duplicate output strobe (RDQS)
  • Provides adjustable data-output drive strength and on-die termination

Memory IC Applications

  • High-bandwidth memory systems requiring DDR2-1066 speeds
  • Embedded designs utilizing the 60-ball FBGA footprint
  • Applications requiring low-power self-refresh capabilities

Memory IC Procurement Notes

Verify the specific speed grade suffix (-187E) matches the required 1066 MT/s performance level. Confirm the 'HQ' designation corresponds to the correct 60-ball FBGA package dimensions. Ensure the 'TR' suffix aligns with the required reel packaging format for automated assembly processes.

Memory IC Selection Notes

Select this component when a 1Gb capacity and 16-bit width are not required, but high-speed 8-bit parallel access is needed. The -187E speed grade is suitable for systems demanding maximum throughput within the DDR2 standard. Verify that the host controller supports the necessary CAS latency and burst length configurations.

Memory IC Part Context

This part belongs to the Micron MT47H128M8 family of 1Gb DDR2 SDRAMs. It shares architectural similarities with the MT47H256M4 and MT47H64M16 variants, differing primarily in density and organization. The HQ package variant specifically denotes the lead-free 60-ball FBGA construction used across the series.

Memory IC Replacement Considerations

Direct substitutes include other Micron parts from the same family with compatible timing or package options. Cross-manufacturer replacements must match the 128Mx8 organization, 1.8V supply, and 60-ball FBGA physical dimensions.

MT47H128M8HQ-187E:E TRMT47H128M8HQ-187E:E TR

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