MT49H16M18BM-18:B

Memory IC Overview

The Micron MT49H16M18BM-18:B is a 288Mb RLDRAM 2 component with a 16 Meg x 18 organization. It operates at a maximum clock frequency of 533 MHz, providing a peak bandwidth of 38.4 Gb/s. The device features an 8-bank architecture and utilizes a 144-ball µBGA package. Electrical specifications include a 1.8V VDD core voltage, 2.5V VEXT, and HSTL I/O standards.

Memory IC Feature Summary

• Supports 533 MHz DDR operation for high-speed data transfer
• Features an 8-bank architecture optimized for concurrent operations
• Includes programmable READ latency and burst sequence length
• Provides on-die termination and differential input clocks

Memory IC Applications

• Telecommunications systems
• Networking equipment
• Cache memory applications

Memory IC Procurement Notes

Verify the specific speed grade suffix to ensure compatibility with system timing requirements. Confirm that the lead-free BM package designation matches the assembly specifications. Check for any manufacturer discontinuation notices or lifecycle status updates before finalizing procurement plans.

Memory IC Selection Notes

Select this component when high bandwidth and low latency are required for networking tasks. Ensure the design supports the necessary 1.8V and 2.5V power rails. Verify that the PCB layout accommodates the 144-ball µBGA footprint and signal integrity requirements for differential clocks.

Memory IC Part Context

This part belongs to the Micron RLDRAM 2 family, designed for high-density, high-bandwidth storage. It serves as a specialized DRAM alternative to standard SRAM in applications demanding fast random access speeds combined with higher density capabilities.

Memory IC Replacement Considerations

Consult official Micron documentation for verified substitute part numbers within the same RLDRAM 2 family. Ensure any replacement maintains identical pinout, voltage levels, and timing parameters.