MT49H32M18CBM-18:B TR

Memory IC Overview

The Micron MT49H32M18CBM-18:B TR is a 576Mb (32M x 18) RLDRAM II memory IC. It operates at a clock frequency of 533 MHz with a 15 ns access time. The device uses a 144-µBGA package measuring 18.5x11 mm and supports a supply voltage range of 1.7V to 1.9V. It functions within a temperature range of 0°C to 95°C TC.

Memory IC Feature Summary

• Supports 533 MHz DDR operation for high-speed data transfer
• Features an SRAM-type interface with nonmultiplexed addresses
• Includes programmable READ latency and burst sequence length

Memory IC Applications

• High bandwidth communication systems
• Telecommunications networking equipment
• Cache applications requiring fast random access

Memory IC Procurement Notes

Verify the specific suffix 'B' against official Micron documentation to confirm exact electrical characteristics and pinout compatibility. Ensure the operating environment stays within the specified 0°C to 95°C case temperature range. Confirm that the 1.7V to 1.9V supply voltage requirements are met by the target system design before integration.

Memory IC Selection Notes

Select this component when designing systems requiring high bandwidth and low latency without address multiplexing overhead. The 144-pin µBGA package suits compact surface-mount designs. Consider the 533 MHz clock speed and 15 ns access time for performance matching against system bus requirements.

Memory IC Part Context

This part belongs to the Micron RLDRAM II family, which provides reduced latency compared to standard DRAM. The series is optimized for applications needing high-speed parallel data access. The 576Mb density offers a balance between capacity and speed for specialized memory subsystems.

Memory IC Replacement Considerations

Check for direct substitutes like the MT49H32M18CHT-18 or MT49H32M18BM-25E:B TR. Verify package dimensions and pin configurations match exactly. Confirm that alternative parts support the same 533 MHz clock frequency and 1.7V-1.9V voltage range.