Memory IC MT49H32M18CBM-18:B product image

MT49H32M18CBM-18:B

  • Description:IC DRAM 576MBIT PARALLEL 144UBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Bulk

SKU:36e14ca48f75 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

MT49H32M18CBM-18:B is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC DRAM 576MBIT PARALLEL 144UBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for MT49H32M18CBM-18:B

  • Description:IC DRAM 576MBIT PARALLEL 144UBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Bulk
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:DRAM
  • Memory Size:576Mbit
  • Memory Organization:32M x 18
  • Memory Interface:Parallel
  • Clock Frequency:533 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.7V ~ 1.9V
  • Operating Temperature:0°C ~ 95°C (TC)
  • Mounting Type:Surface Mount
  • Package / Case:144-TFBGA
  • Supplier Device Package:144-µBGA (18.5x11)
  • Access Time:15 ns

Memory IC datasheet and documents for MT49H32M18CBM-18:B

MT49H32M18CBM-18:B

Memory IC Overview

The Micron MT49H32M18CBM-18:B is a Reduced Latency DRAM (RLDRAM) IC with a total capacity of 576Mb, organized as 32 Meg x 18. It operates at a clock frequency of 533 MHz and features an access time of 15 ns. The device utilizes a 144-pin µBGA package measuring 18.5x11 mm. Power supply requirements include VDD/VDDQ voltages ranging from 1.7V to 1.95V and VEXT at 2.5V.

Memory IC Feature Summary

  • Supports high-speed DDR operation with up to 533 MHz clock frequency for optimized data bandwidth
  • Features non-multiplexed addresses and cyclic bank addressing for fast random access
  • Includes programmable READ latency and data mask signals for write command control

Memory IC Applications

  • High bandwidth communication data storage
  • Telecommunications networking equipment
  • Cache applications in embedded systems

Memory IC Procurement Notes

Verify the specific suffix 'CBM' against official Micron documentation to confirm voltage levels and I/O standards. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Ensure the 144-pin µBGA footprint matches the target PCB design specifications before ordering.

Memory IC Selection Notes

Select this component when designing systems requiring low-latency memory access without row/column address multiplexing overhead. It is suitable for applications demanding high sequential burst performance and balanced read/write latencies. Compare against other RLDRAM II variants based on required organization width and operating temperature ranges.

Memory IC Part Context

This part belongs to the Micron MT49H series of Reduced Latency DRAMs. It shares architectural similarities with other devices in the family, such as the MT49H32M18BM-18, but differs in specific electrical characteristics and packaging options defined by its unique suffix code.

Memory IC Replacement Considerations

Direct substitutes within the same family include the MT49H32M18BM-18:B. Verify pin compatibility and electrical parameters before swapping components.

MT49H32M18CBM-18:BMT49H32M18CBM-18:B

Click on the inquiry

Recent News