N413

DIACs, SIDACs Overview

The N0413N is an N-channel MOSFET designed for high-current switching applications. It features a maximum drain-source voltage (V_DSS) of 40 V and a continuous drain current (I_D) of 100 A. The device exhibits a low on-state resistance (R_DS(on)) of 3.3 mΩ maximum at V_GS = 10 V and I_D = 50 A, with typical input capacitance (C_iss) of 5550 pF. It is housed in a TO-263/D2PAK package and meets industrial qualification levels.

DIACs, SIDACs Feature Summary

• Low on-state resistance for efficient power handling
• High continuous current capability for demanding loads
• Low input capacitance for fast switching performance

DIACs, SIDACs Applications

• High current switching applications
• Industrial power management systems

DIACs, SIDACs Procurement Notes

Verify the exact part number suffix against official Renesas documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and industrial qualification level requirements prior to procurement. Cross-reference datasheet revisions to ensure compatibility with existing design parameters.

DIACs, SIDACs Selection Notes

Select this component when designing circuits requiring 40 V blocking voltage and up to 100 A continuous current. Ensure gate drive conditions can achieve the specified R_DS(on) at 10 V. Verify thermal management capabilities for the TO-263 package under expected load conditions.

DIACs, SIDACs Part Context

The N0413N belongs to the Renesas N-channel MOSFET family optimized for power switching. It serves as a robust solution for applications needing low conduction losses and high current density within a standard surface-mount footprint.

DIACs, SIDACs Replacement Considerations

Check for direct substitutes such as N0413N_15 or N0413N-ZK-E1-AY from Renesas. Verify pinout compatibility and electrical parameter equivalence before substitution.