Single Bipolar Transistors NJVMJD42CRLG product image

NJVMJD42CRLG

$1.28
  • Description:TRANS PNP 100V 6A DPAK
  • Series:-

SKU:0c19d75b557f Category: Brand:

  
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NJVMJD42CRLG is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 100V 6A DPAK. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for NJVMJD42CRLG

  • Description:TRANS PNP 100V 6A DPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):6:00 AM
  • Voltage - Collector Emitter Breakdown (Max):100 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 600mA, 6A
  • Current - Collector Cutoff (Max):50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 3A, 4V
  • Power - Max:1.75 W
  • Frequency - Transition:3MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:DPAK
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for NJVMJD42CRLG

NJVMJD42CRLG

Single Bipolar Transistors Overview

The NJVMJD42CRLG is a PNP silicon power transistor from onsemi, part of the MJD42C complementary series designed for surface mount applications. It features a DPAK (Case 369C) package with lead-formed configuration. Key electrical ratings include a collector-emitter voltage of 100 Vdc and continuous collector current of 6 Adc. The device supports a peak collector current of 10 Adc and total power dissipation up to 20 W at 25°C case temperature. It exhibits a DC current gain minimum of 15 at 3 A and 4 V, with a transition frequency of 3 MHz.

Single Bipolar Transistors Feature Summary

  • NJV prefix indicates qualification for automotive applications requiring unique site and control change requirements, meeting AEC-Q101 standards and PPAP capability.
  • Designed as a general-purpose amplifier and low-speed switching component, offering electrical similarity to popular TIP41 and TIP42 series devices.
  • Constructed with epoxy material that meets UL 94 V-0 flammability rating at 0.125 inches thickness.

Single Bipolar Transistors Applications

  • Automotive systems requiring AEC-Q101 qualified components
  • General purpose amplifier circuits
  • Low speed switching applications

Single Bipolar Transistors Procurement Notes

Verify the presence of the NJV prefix to confirm automotive-grade status and AEC-Q101 qualification. Ensure the ordering suffix matches the required shipping format, such as tape and reel specifications. Confirm compliance with RoHS directives and Pb-free packaging requirements during procurement. Cross-reference the specific document revision date to ensure access to the most current technical data and ordering information.

Single Bipolar Transistors Selection Notes

Select this component when an NPN/PNP complementary pair is needed for surface mount designs. The DPAK package provides efficient thermal management with a junction-to-case thermal resistance of 6.25 °C/W. Consider the 100 V collector-emitter voltage rating for moderate voltage switching tasks. Verify that the 6 A continuous current rating aligns with the load requirements of the intended circuit application.

Single Bipolar Transistors Part Context

This device belongs to the MJD41C/MJD42C family of complementary power transistors manufactured by onsemi. The MJD42C specifically denotes the PNP variant within this series. These transistors are engineered to replace through-hole equivalents in modern surface mount assembly processes while maintaining comparable performance characteristics for general electronic applications.

Single Bipolar Transistors Replacement Considerations

MJD42CRLG serves as the standard commercial equivalent without the automotive prefix. MJD42CT4G offers an alternative tape and reel quantity option. For direct functional replacement in non-automotive contexts, verify pinout compatibility and thermal resistance specifications against existing design constraints.

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