NSCT817-25LT3G

Single Bipolar Transistors Overview

The NSCT817-25LT3G is a general-purpose NPN silicon transistor manufactured by onsemi. It operates with a collector-emitter voltage of 45 V and supports a continuous collector current of 500 mA. The device features a DC current gain (hFE) ranging from 160 to 400 at 100 mA, with a transition frequency of 100 MHz. Thermal dissipation reaches 300 mW on an alumina substrate. It is housed in a surface-mount SOT-23 package.

Single Bipolar Transistors Feature Summary

• NPN silicon construction for general-purpose switching applications
• Lead-free packaging compliant with environmental standards
• High DC current gain suitable for amplification tasks
• SOT-23 surface-mount form factor for compact designs

Single Bipolar Transistors Applications

• General-purpose signal switching
• Low-power amplifier circuits
• Driver stages for logic interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm tape and reel specifications. Confirm that the component matches the exact manufacturer part number required for the design. Ensure compliance with RoHS directives and check for any recent production changes or material declarations provided by the supplier.

Single Bipolar Transistors Selection Notes

Select this component when a standard NPN transistor with moderate current handling and high gain is required. Consider the thermal resistance characteristics if operating near maximum power limits. Verify that the SOT-23 footprint aligns with the PCB layout constraints and that the voltage ratings meet the circuit requirements.

Single Bipolar Transistors Part Context

This device belongs to the BC817/BC817 series of general-purpose NPN transistors. It shares similar electrical characteristics with other variants in the family but is distinguished by its specific gain binning and packaging configuration. The series is widely used in consumer electronics and industrial control systems requiring reliable small-signal performance.

Single Bipolar Transistors Replacement Considerations

Compatible substitutes include the NSCT817-40LT3G for higher breakdown voltage requirements. Other generic NPN transistors in the SOT-23 package may serve as alternatives if electrical parameters such as hFE and Vceo are closely matched.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the NSCT817-25LT3G?

The maximum collector-emitter voltage (VCEO) is 45 V.

Does the NSCT817-25LT3G come in a lead-free package?

Yes, the device is explicitly listed as a Pb-Free device.

What is the typical DC current gain range for this transistor?

The DC current gain (hFE) ranges from 160 to 400 when measured at IC = 100 mA and VCE = 1.0 V.