RF Diode NSVP249SDSF3T1G product image

NSVP249SDSF3T1G

$0.39
  • Description:DIODE PIN 50V 100MW SC70/MCPH3
  • Series:-

SKU:70b8060b4834 Category: Brand:

  
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NSVP249SDSF3T1G is listed in the RF Diode range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE PIN 50V 100MW SC70/MCPH3. Review the specifications below when checking this part for your BOM.

RF Diode specifications for NSVP249SDSF3T1G

  • Description:DIODE PIN 50V 100MW SC70/MCPH3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Type:PIN - 1 Pair Series Connection
  • Voltage - Peak Reverse (Max):50V
  • Current - Max:50 mA
  • Capacitance @ Vr, F:0.23pF @ 50V, 1MHz
  • Resistance @ If, F:4.5Ohm @ 10mA, 100MHz
  • Power Dissipation (Max):100 mW
  • Operating Temperature:-55°C ~ 125°C (TJ)
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SC-70 / MCP3
  • Grade:Automotive
  • Qualification:AEC-Q101

RF Diode datasheet and documents for NSVP249SDSF3T1G

NSVP249SDSF3T1G

RF Diode Overview

The NSVP249SDSF3T1G is a PIN diode from onsemi, designed for high-frequency switching and attenuation applications. It features a maximum reverse voltage of 50 V and a low maximum series resistance of 2.5 Ohms at mid-frequencies. The device supports a maximum forward current of 100 mA with a typical forward voltage of 950 mV. Operating frequencies range from 1 MHz to 8 GHz, with a maximum diode capacitance of 600 fF. It is housed in an SOD-323-2 surface-mount package and operates within a temperature range of -55°C to +175°C.

RF Diode Feature Summary

  • High-frequency performance optimized for RF switching and attenuation circuits
  • Low parasitic capacitance enabling efficient signal handling at GHz frequencies
  • Robust thermal stability supporting operation up to 175°C junction temperature
  • Compact SOD-323-2 footprint suitable for space-constrained surface-mount designs

RF Diode Applications

  • RF switch matrices in communication systems
  • Variable attenuators in test and measurement equipment
  • Signal routing in mobile handsets and base stations
  • Protection circuits in high-frequency data transmission lines

RF Diode Procurement Notes

Verify the complete ordering part number including suffixes such as T1G for tape-and-reel packaging configuration. Confirm that the supplier provides traceability documentation consistent with onsemi manufacturing standards. Ensure compliance with RoHS directives and check for any specific automotive or industrial qualification requirements relevant to the end application before finalizing procurement orders.

RF Diode Selection Notes

Select this component when low capacitance and fast switching speeds are critical for RF signal integrity. Evaluate the 2.5 Ohm series resistance against insertion loss requirements in the target circuit. Consider the SOD-323-2 package size for PCB layout constraints. Verify that the 50 V reverse voltage rating exceeds peak inverse voltages present in the operational environment to ensure long-term reliability.

RF Diode Part Context

This part belongs to onsemi's NSVP series of PIN diodes, which are engineered for radio frequency applications. The series offers various voltage and capacitance combinations to suit different frequency bands and power levels. The NSVP249 variant specifically targets applications requiring moderate reverse blocking capability with minimal capacitive loading at high frequencies.

RF Diode Replacement Considerations

Cross-reference with other NSVP series parts like NSVP264SDSF3T1G for higher voltage ratings if system requirements change. Check manufacturer datasheets for direct pin-compatible alternatives with similar capacitance and resistance profiles to ensure seamless integration without redesigning the surrounding RF circuitry.

NSVP249SDSF3T1GNSVP249SDSF3T1G
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