NSVP264SDSF3T1G

RF Diode Overview

The NSVP264SDSF3T1G is a PIN diode manufactured by onsemi, designed for RF switch and attenuator applications. It features a low series resistance of 0.5 ohms maximum at a forward current of 10 mA. The device supports a reverse voltage of 25 V and has a maximum junction capacitance of 0.8 pF. It operates within a temperature range of -55°C to +175°C. The component is housed in an SOD-323 surface-mount package.

RF Diode Feature Summary

• Low series resistance for efficient RF signal handling
• High thermal stability suitable for demanding environments
• Compact surface-mount packaging for space-constrained designs

RF Diode Applications

• RF switching circuits
• Variable RF attenuators
• High-frequency signal control systems

RF Diode Procurement Notes

Verify the complete part number including the T1G suffix to ensure correct tape-and-reel packaging configuration. Confirm that the SOD-323 footprint matches the target PCB layout. Validate electrical parameters against specific circuit requirements before finalizing procurement orders.

RF Diode Selection Notes

Select this component when low insertion loss and high isolation are required in RF paths. Ensure the operating frequency aligns with the device's capacitance specifications. Verify that the forward current capability meets the attenuation or switching drive requirements of the application design.

RF Diode Part Context

This part belongs to onsemi's NSVP series of PIN diodes, which are optimized for radio frequency applications. The series provides various packages and electrical characteristics to support different power and size constraints in communication equipment and test instruments.

RF Diode Replacement Considerations

Check for direct substitutes such as the NSVP264SDSF3 variant, ensuring package and electrical parameter compatibility. Verify pinout alignment and thermal performance equivalence before implementing any alternative components in existing designs.