NTBG160N120SC1

Single FETs, MOSFETs Overview

The NTBG160N120SC1 is a single N-channel Silicon Carbide (SiC) MOSFET manufactured by onsemi. It features a 1200V drain-source breakdown voltage and a maximum on-resistance of 160 milliohms at 25°C. The device utilizes a D2PAK-7L surface-mount package designed for high-power applications. Key electrical characteristics include a continuous drain current rating of 19.5A and a gate-source voltage limit of ±20V. The component operates within a junction temperature range of -40°C to +175°C, supporting robust thermal performance in demanding power electronics environments.

Single FETs, MOSFETs Feature Summary

• Utilizes silicon carbide semiconductor technology for superior thermal conductivity and high-temperature operation capabilities compared to traditional silicon devices.

Single FETs, MOSFETs Applications

• High-efficiency power conversion systems
• Industrial motor drives
• Uninterruptible power supply (UPS) designs

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering suffix when sourcing. Confirm that the D2PAK-7L footprint matches the target PCB layout. Ensure thermal management solutions are adequate for the specified power dissipation limits under intended operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high-voltage blocking capability with moderate current ratings. The 160 milliohm on-resistance offers a balance between conduction losses and switching performance. Consider the D2PAK-7L package for surface-mount assembly requirements in compact power modules.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's EliteSiC series of silicon carbide MOSFETs. The series targets high-performance power switching applications where efficiency and thermal stability are critical. The NTBG160N120SC1 represents a specific configuration within the broader portfolio of SiC discrete devices offered by the manufacturer.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 1200V rating, D2PAK-7L package, and similar on-resistance values. Verify pinout compatibility and thermal characteristics before substitution. Cross-reference with other onsemi SiC MOSFETs in the same voltage class if available.