NTBLS1D5N10MCTXG

Single FETs, MOSFETs Overview

The NTBLS1D5N10MCTXG is a single N-channel Power MOSFET manufactured by onsemi, housed in an 8-HPSOF surface-mount package. It features a drain-source voltage (Vdss) of 100 V and a maximum gate-source voltage (Vgs) of ±20 V. The device exhibits a low on-resistance (Rds(on)) of 1.5 mΩ at 10 V gate drive with 80 A current. Continuous drain current (Id) ratings are 32 A at ambient temperature and 312 A at case temperature. Key dynamic parameters include a maximum gate charge (Qg) of 131 nC at 10 V and an input capacitance (Ciss) of 10,100 pF at 50 V. The component operates within a junction temperature range of -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

• Low on-resistance for high-efficiency power switching
• High continuous drain current capability in compact package
• Optimized gate charge for fast switching performance

Single FETs, MOSFETs Applications

• DC-DC converter output stages
• Motor control applications
• Power distribution systems

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including suffixes against official manufacturer documentation to ensure correct packaging and specifications. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration into manufacturing processes. Cross-reference datasheet revisions to validate electrical characteristics match design requirements.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high current handling in a small footprint. Evaluate thermal management strategies based on the specified power dissipation limits at ambient and case temperatures. Ensure gate drive voltage aligns with the 10 V specification for optimal Rds(on) performance. Consider input capacitance values when designing driver circuits for switching frequency targets.

Single FETs, MOSFETs Part Context

This device belongs to onsemi's TOLL/PowerSFN family of power MOSFETs, designed for high-current applications. The 8-HPSOF package provides enhanced thermal performance compared to standard SO-8 packages. It is part of the broader portfolio of silicon-based power switches intended for automotive and industrial power management solutions.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same voltage and current class. Verify that substitute components meet or exceed the 1.5 mΩ Rds(on) and 312 A Id specifications. Ensure package dimensions and thermal pad configurations match the existing PCB layout constraints.