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NTD4860NT4G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists UMW. Its product description is MOSFET N-CH 25V 10.4A/65A DPAK. Review the specifications below when checking this part for your BOM.
The UMW NTD4860NT4G is a 25V N-channel MOSFET in a TO-252 package. It features a maximum continuous drain current of 65A at TC=25°C and an on-resistance (RDS(on)) of less than 7.5mΩ at VGS=10V and ID=30A, or 11.1mΩ at VGS=4.5V. The device supports a pulsed drain current of 130A and operates within a junction temperature range of -55°C to +175°C. Key electrical parameters include a gate threshold voltage of 1.45V to 2.5V, input capacitance of 1308pF, and total gate charge of 21.8nC at VGS=10V.
Verify the component authenticity by checking the marking code against the official datasheet specifications. Confirm the package type is TO-252 and the ordering suffix matches NT4G for tape and reel delivery. Ensure the supplier provides traceability documentation consistent with UTD Semiconductor manufacturing standards before finalizing procurement orders.
Select this component for applications requiring high current handling up to 65A with low thermal resistance. Consider the RDS(on) values at specific gate voltages when designing drive circuits. Evaluate the thermal management requirements based on the junction-to-case resistance and expected duty cycles to ensure operation within the specified temperature limits.
This part belongs to the UMW NTD series of 25V N-channel MOSFETs designed for power switching applications. The NTD4860 variant specifically targets high-current scenarios where low conduction and switching losses are critical. It is manufactured by UTD Semiconductor Co., Limited and distributed under the UMW brand.
Consult official cross-reference lists from UTD Semiconductor for verified substitutes. Ensure any replacement maintains compatible pinout, voltage ratings, and thermal performance characteristics.
The maximum pulsed drain current (IDM) is 130A with a pulse width of 10µs at TA = 25°C.
The RDS(on) is specified as less than 7.5mΩ at VGS = 10V and less than 11.1mΩ at VGS = 4.5V, both measured at ID = 30A.
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