NTH4L045N065SC1

Single FETs, MOSFETs Overview

The NTH4L045N065SC1 is a silicon carbide (SiC) MOSFET manufactured by onsemi, belonging to the EliteSiC series. It features an N-channel enhancement mode configuration housed in a TO-247-4L through-hole package. The device supports a maximum drain-source voltage of 650 V and delivers a continuous drain current of 55 A at case temperature. Key electrical parameters include a maximum gate charge of 105 nC at 18 V, a threshold voltage of 4.3 V, and an input capacitance of 1870 pF. It operates within a junction temperature range of -55°C to 175°C with a power dissipation rating of 187 W.

Single FETs, MOSFETs Feature Summary

• Utilizes silicon carbide technology for high thermal stability and efficiency
• Features a four-terminal TO-247-4L package for optimized thermal performance
• Designed for low switching losses and fast switching speeds

Single FETs, MOSFETs Applications

• High-frequency power conversion systems
• Industrial motor drives
• Uninterruptible power supplies (UPS)
• Solar inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'SC1' against official onsemi documentation to confirm pinout compatibility and thermal characteristics. Ensure that the TO-247-4L footprint matches the target PCB design. Confirm RoHS compliance status directly from the manufacturer's datasheet before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust high-voltage handling with reduced conduction losses. The TO-247-4L package facilitates effective heat dissipation for high-current applications. Evaluate the 105 nC gate charge against available gate driver capabilities to ensure optimal switching performance and minimize drive circuit complexity.

Single FETs, MOSFETs Part Context

This part belongs to the EliteSiC family of wide-bandgap semiconductors from onsemi. These devices are engineered to replace traditional silicon MOSFETs in demanding power electronics environments. The NTH4L045N065SC1 specifically targets applications where size reduction and efficiency gains are critical due to its superior material properties.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other 650V SiC MOSFETs in similar packages, such as the NVH4L075N065SC1 or NTHL045N065SC1. Verify pinout alignment and thermal resistance values before substitution.