NTHS5402T1

$0.22

Description：MOSFET N-CH 30V 4.9A CHIPFET
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Bulk

SKU:dd1c9b5cb222 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

NTHS5402T1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 30V 4.9A CHIPFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NTHS5402T1

Description：MOSFET N-CH 30V 4.9A CHIPFET
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：4.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：35mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：1.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：ChipFET™
Package / Case：8-SMD, Flat Leads

Single FETs, MOSFETs datasheet and documents for NTHS5402T1

NTHS5402T1

Single FETs, MOSFETs Overview

The NTHS5402T1 is a single N-Channel Power MOSFET from onsemi, housed in an 8-pin ChipFET (CASE 1206A) surface-mount package. It features a drain-source voltage rating of 30 V and a continuous drain current capability of 4.9 A at 25°C ambient temperature. The device exhibits a typical on-state resistance of 30 mΩ at VGS = 10 V and 45 mΩ at VGS = 4.5 V. Key dynamic parameters include a total gate charge of 13 nC and turn-on/turn-off times of approximately 10 ns. Maximum power dissipation is rated at 2.5 W at 25°C, with an operating junction temperature range spanning -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Miniature ChipFET surface mount package designed to save board space
Low RDS(on) characteristics for higher efficiency operation
Logic level gate drive compatibility

Single FETs, MOSFETs Applications

Power management in portable products
Battery-powered cellular telephones
Cordless telephones
PCMCIA cards

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'T1' corresponds to the tape and reel shipping configuration as documented in the datasheet. Confirm that the component meets RoHS compliance standards required for your assembly process. Ensure the ChipFET CASE 1206A footprint matches your PCB design guidelines, particularly regarding the thermal pad area for the drain connections to maintain optimal heat dissipation performance.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-Channel MOSFET with a 30 V breakdown voltage is required for low-power portable applications. The logic-level gate drive capability makes it suitable for direct interfacing with standard digital control signals. Consider the thermal impedance characteristics and recommended copper pad patterns to ensure the device operates within its maximum junction temperature limits under steady-state conditions.

Single FETs, MOSFETs Part Context

This part belongs to the NTHS540x series of N-Channel Power MOSFETs manufactured by onsemi. These devices utilize the ChipFET technology, which integrates the die into a specialized surface-mount package to minimize parasitic inductance and improve thermal performance compared to traditional leaded packages. The series is targeted at consumer electronics requiring high density and efficiency.