NTMFS4C906NBT1G

Single FETs, MOSFETs Overview

The NTMFS4C906NBT1G is a dual N-channel enhancement mode MOSFET from onsemi, designed for high-voltage operation and fast switching applications. It features a low gate resistance (Rg) architecture to withstand high-current stresses efficiently. The device is housed in an SO-8FL surface-mount package, providing robust thermal performance. Key electrical characteristics include a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 69 A per channel. The typical on-resistance (Rds(on)) is 2.82 mΩ at Vgs = 10 V, with a maximum gate-source voltage of ±20 V and a power dissipation rating of 30.5 W.

Single FETs, MOSFETs Feature Summary

• Dual N-channel configuration optimized for high-voltage operation
• Low gate resistance design enables fast switching speeds
• Capable of withstanding high-current stresses effectively

Single FETs, MOSFETs Applications

• High-frequency power conversion circuits
• Motor control systems requiring fast switching
• Power management modules handling high current loads

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering suffix when sourcing. Confirm that the SO-8FL package dimensions match your PCB footprint requirements. Ensure compatibility with the intended gate drive voltage levels, as the threshold and maximum ratings are critical for reliable operation. Cross-reference the manufacturer's part number with authorized distributors to avoid counterfeit components.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring dual isolated channels in a compact surface-mount form factor. The low Rds(on) minimizes conduction losses, while the fast switching capability reduces dynamic losses. Consider the thermal dissipation capabilities of the SO-8FL package relative to the expected ambient temperature and load conditions during circuit design.

Single FETs, MOSFETs Part Context

This device belongs to onsemi's TRENCH 6 family of MOSFETs, which utilizes advanced trench technology to achieve low on-resistance and improved switching performance. The series is engineered for efficiency in power electronics, balancing electrical performance with thermal stability for demanding industrial and consumer applications.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for verified equivalents. Ensure any replacement maintains the same dual N-channel topology, voltage/current ratings, and package type to preserve circuit functionality.