Single FETs, MOSFETs NTTFSSCH1D3N04XL product image

NTTFSSCH1D3N04XL

  • Description:MOSFET - POWER, SINGLE, N-CHANNE
  • Series:-
  • Mfr:onsemi
  • Package:Bulk

SKU:e2042f2e8163 Category: Brand:

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NTTFSSCH1D3N04XL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET - POWER, SINGLE, N-CHANNE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NTTFSSCH1D3N04XL

  • Description:MOSFET - POWER, SINGLE, N-CHANNE
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:207A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:1.3mOhm @ 24A, 10V
  • Vgs(th) (Max) @ Id:2.2V @ 120µA
  • Gate Charge (Qg) (Max) @ Vgs:28 nC @ 6 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:3480 pF @ 20 V
  • FET Feature:-
  • Power Dissipation (Max):107W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:9-WDFN (3.3x3.3)
  • Package / Case:9-PowerUDFN

Single FETs, MOSFETs datasheet and documents for NTTFSSCH1D3N04XL

NTTFSSCH1D3N04XL

Single FETs, MOSFETs Overview

The onsemi NTTFSSCH1D3N04XL is a single N-channel PowerTrench T10 MOSFET designed for high-efficiency power conversion. It features a 40V drain-source voltage rating and a continuous drain current of 207A. The device achieves an ultra-low maximum on-resistance (RDS(on)) of 1.3mΩ, minimizing conduction losses in demanding applications. Packaged in a compact 3.3mm x 3.3mm DualCool source-down center gate configuration, it offers superior thermal management capabilities suitable for space-constrained designs.

Single FETs, MOSFETs Feature Summary

  • Utilizes advanced Source-Down Center Gate DualCool packaging to enhance heat dissipation and board-level reliability through exposed bottom pads.
  • Employs shielded gate trench technology to deliver ultra-low gate charge and capacitance, significantly reducing switching and drive losses.
  • Features soft recovery characteristics to suppress voltage overshoot and electromagnetic interference during high-frequency switching operations.

Single FETs, MOSFETs Applications

  • DC-DC power conversion stages in data centers
  • Cloud computing infrastructure power supplies
  • High-density server power distribution networks

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to ensure correct package variant and tape-and-reel specifications. Confirm that the component meets required automotive or industrial qualification standards if applicable to your design. Cross-reference the datasheet revision date with your bill of materials to avoid discrepancies in electrical parameters or mechanical dimensions during final validation.

Single FETs, MOSFETs Selection Notes

Select this component when system efficiency and thermal density are critical constraints. The low RDS(on) combined with the DualCool package makes it suitable for high-current applications where traditional packages cannot dissipate heat effectively. Ensure the gate driver can handle the low gate charge requirements to maximize switching speed without excessive drive current demands.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's PowerTrench T10 family, which focuses on optimizing the balance between conduction and switching losses. The DualCool technology represents a shift from standard surface-mount packages by directing heat directly into the PCB substrate, allowing for higher power density in compact form factors compared to legacy DFN or SO-8 solutions.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 40V rating, 1.3mΩ max RDS(on), and 3.3x3.3mm DualCool footprint. Verify pinout compatibility and thermal pad alignment. Substitutes should offer similar gate charge characteristics to maintain existing driver performance without redesigning the control loop.

NTTFSSCH1D3N04XLNTTFSSCH1D3N04XL

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