NVHL040N60S5F

Single FETs, MOSFETs Overview

The NVHL040N60S5F is a single N-channel power MOSFET from the SUPERFET V FRFET series, packaged in TO-247-3. It features a 600 V drain-to-source voltage and a maximum on-resistance of 40 mΩ at 10 V gate drive. The device supports a continuous drain current of 59 A at 25°C case temperature and handles a pulsed drain current of 209 A. Key electrical parameters include a typical on-resistance of 32 mΩ at 150°C, a total gate charge of 115 nC, and an input capacitance of 6318 pF. It operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Optimized body diode performance characteristics for improved reliability in soft switching topologies
• 100% avalanche tested for enhanced ruggedness
• Lead-free, halogen-free, and BFR-free construction compliant with RoHS standards

Single FETs, MOSFETs Applications

• Electric vehicle on-board chargers
• EV main battery DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Ensure thermal management designs account for the specified junction-to-case thermal resistance. Confirm that application conditions remain within the absolute maximum ratings defined in the datasheet to maintain device reliability and functionality.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring optimized body diode recovery characteristics. Consider the 600 V rating and low on-resistance for efficient power conversion. Evaluate thermal requirements based on the 347 W power dissipation capability at 25°C case temperature. Verify compatibility with gate drive voltages up to ±30 V.

Single FETs, MOSFETs Part Context

This part belongs to the SUPERFET V FRFET family, designed for high-performance power switching. The series emphasizes reduced component count and improved system reliability through advanced body diode engineering. It targets demanding automotive and industrial power electronics environments where robustness and efficiency are critical.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for verified alternatives. Cross-reference key parameters such as voltage rating, on-resistance, and package dimensions when evaluating potential replacements.

Single FETs, MOSFETs FAQ

What is the typical on-resistance at elevated temperatures?

The typical on-resistance is 32 mΩ at a junction temperature of 150°C.

Is the device suitable for soft switching applications?

Yes, the optimized body diode performance makes it particularly effective for improving performance and reliability in soft switching topologies.