PJQ5413_R2_00001

$0.15

Description：30V P-CHANNEL ENHANCEMENT MODE M
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR)

SKU:b8ce56e775fe Category: Single FETs, MOSFETs Brand: Panjit International Inc.

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Product introduction

PJQ5413_R2_00001 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Panjit International Inc.. Its product description is 30V P-CHANNEL ENHANCEMENT MODE M. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PJQ5413_R2_00001

Description：30V P-CHANNEL ENHANCEMENT MODE M
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：6.5A (Ta), 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：30mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7.8 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：870 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 30W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DFN5060-8
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for PJQ5413_R2_00001

PJQ5413_R2_00001

Single FETs, MOSFETs Overview

The PJQ5413_R2_00001 is a P-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It features a DFN5060-8L package and operates with a drain-source voltage of -30 V. The device supports a continuous drain current of -25 A at TC=25°C, with a maximum on-state resistance of 30 mΩ at VGS=-10V and ID=-4A. Key electrical parameters include a gate threshold voltage of -1 to -2.5 V, total gate charge of 7.8 nC, and input capacitance of 870 pF. Thermal characteristics specify a junction-to-case resistance of 4.2 °C/W and a junction-to-ambient resistance of 62.5 °C/W.

Single FETs, MOSFETs Feature Summary

High switching speed capability
Improved dv/dt performance
Low gate charge for efficient drive requirements
Low reverse transfer capacitance

Single FETs, MOSFETs Applications

Power management circuits
DC-DC converter topologies
Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the component status as Not Recommended for New Designs (NRND) before initiating procurement. Confirm that the specific ordering suffix matches the required halogen-free version and reel packaging specifications. Ensure compatibility with existing design constraints given the end-of-life recommendation.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 30V P-Channel MOSFET in a DFN5060-8L footprint. Evaluate thermal dissipation capabilities against the specified junction-to-ambient resistance values. Verify that the low gate charge and high switching speed align with the target application's efficiency and frequency requirements.

Single FETs, MOSFETs Part Context

This part belongs to the PJQ5413 series of P-Channel Enhancement Mode MOSFETs produced by Panjit International Inc. The manufacturer specializes in discrete semiconductor devices including MOSFETs, diodes, and transistors. This specific model utilizes silicon technology and complies with EU RoHS 2.0 standards using green molding compound.